Top-gate staggered poly(3,3‴-dialkyl-quarterthiophene) organic thin-film transistors with reverse-offset-printed silver source/drain electrodes

Minseok Kim; Jae Bon Koo; Kang Jun Baeg; Soon Won Jung; Byeong Kwon Ju; In Kyu You

doi:10.1063/1.4755878

Top-gate staggered poly(3,3‴-dialkyl-quarterthiophene) organic thin-film transistors with reverse-offset-printed silver source/drain electrodes

Minseok Kim, Jae Bon Koo, Kang Jun Baeg, Soon Won Jung, Byeong Kwon Ju, In Kyu You

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

Here, we report on high-performance top-gated poly(3,3‴-dialkyl- quarterthiophene) (PQT-12) organic thin-film transistors (OTFTs) with reverse-offset-printed (ROP) silver (Ag) source/drain (S/D) electrodes. OTFT devices with ROP S/D electrodes using Ag nanopaste show higher performance (∼0.01cm²/Vs) than those fabricated by vacuum electron beam evaporation with conventional photolithography and a standard lift-off process (∼1×10^-3cm²/Vs). This dissimilarity is attributed to the higher work function (-4.9eV) of the ROP Ag electrode due to AgO formation on the Ag surface during thermal annealing. This results in a low interfacial hole injection energy barrier between the S/D electrodes and the PQT-12 semiconductor.

Original language	English
Article number	133306
Journal	Applied Physics Letters
Volume	101
Issue number	13
DOIs	https://doi.org/10.1063/1.4755878
Publication status	Published - 2012 Sept 24

Bibliographical note

Funding Information:
This study was supported by the Development of New Materials and Solution Process for LCD Backplanes funded by ISTK (B551179-09-06-00), Basic Science Research Program, through the National Research Foundation of Korea (NRF), funded by the Ministry of Education, Science and Technology (2010-0015035), by the Development of printing ink for touch panels and OLED lighting (A2010D-D006), funded by the Ministry of Knowledge Economy (MKE) and Daedeok innopolis, by the IT R&D Program (Grant No. 2008-F-024-02, Development of Mobile Flexible (Input/Output Platform) MKE, and by the IT R&D Infrastructure Program supervised by the NIPA (National IT Industry Promotion Agency) (NIPA-2011-(B1110-1101-0002) MKE in Korea. The authors would like to thank Ph. D. Jeong, Hu Young in UNIST Central Research Facilities for the preparation of transmission electron microscope.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Cite this

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title = "Top-gate staggered poly(3,3‴-dialkyl-quarterthiophene) organic thin-film transistors with reverse-offset-printed silver source/drain electrodes",

abstract = "Here, we report on high-performance top-gated poly(3,3‴-dialkyl- quarterthiophene) (PQT-12) organic thin-film transistors (OTFTs) with reverse-offset-printed (ROP) silver (Ag) source/drain (S/D) electrodes. OTFT devices with ROP S/D electrodes using Ag nanopaste show higher performance (∼0.01cm2/Vs) than those fabricated by vacuum electron beam evaporation with conventional photolithography and a standard lift-off process (∼1×10-3cm2/Vs). This dissimilarity is attributed to the higher work function (-4.9eV) of the ROP Ag electrode due to AgO formation on the Ag surface during thermal annealing. This results in a low interfacial hole injection energy barrier between the S/D electrodes and the PQT-12 semiconductor.",

author = "Minseok Kim and Koo, {Jae Bon} and Baeg, {Kang Jun} and Jung, {Soon Won} and Ju, {Byeong Kwon} and You, {In Kyu}",

note = "Funding Information: This study was supported by the Development of New Materials and Solution Process for LCD Backplanes funded by ISTK (B551179-09-06-00), Basic Science Research Program, through the National Research Foundation of Korea (NRF), funded by the Ministry of Education, Science and Technology (2010-0015035), by the Development of printing ink for touch panels and OLED lighting (A2010D-D006), funded by the Ministry of Knowledge Economy (MKE) and Daedeok innopolis, by the IT R&D Program (Grant No. 2008-F-024-02, Development of Mobile Flexible (Input/Output Platform) MKE, and by the IT R&D Infrastructure Program supervised by the NIPA (National IT Industry Promotion Agency) (NIPA-2011-(B1110-1101-0002) MKE in Korea. The authors would like to thank Ph. D. Jeong, Hu Young in UNIST Central Research Facilities for the preparation of transmission electron microscope.",

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AU - Ju, Byeong Kwon

AU - You, In Kyu

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N2 - Here, we report on high-performance top-gated poly(3,3‴-dialkyl- quarterthiophene) (PQT-12) organic thin-film transistors (OTFTs) with reverse-offset-printed (ROP) silver (Ag) source/drain (S/D) electrodes. OTFT devices with ROP S/D electrodes using Ag nanopaste show higher performance (∼0.01cm2/Vs) than those fabricated by vacuum electron beam evaporation with conventional photolithography and a standard lift-off process (∼1×10-3cm2/Vs). This dissimilarity is attributed to the higher work function (-4.9eV) of the ROP Ag electrode due to AgO formation on the Ag surface during thermal annealing. This results in a low interfacial hole injection energy barrier between the S/D electrodes and the PQT-12 semiconductor.

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Top-gate staggered poly(3,3‴-dialkyl-quarterthiophene) organic thin-film transistors with reverse-offset-printed silver source/drain electrodes

Abstract

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