Total Dose Effects and Single Event Upsets during Radiation Damage of GaN and SiC

Ani Khachatrian; Adrian Ildefonso; Zahabul Islam; Md Abu Jafar Rasel; Amanul Haque; Jihyun Kim; Fan Ren; Minghan Xian; Stephen J. Pearton

doi:10.1149/10407.0013ecst

Total Dose Effects and Single Event Upsets during Radiation Damage of GaN and SiC

Ani Khachatrian, Adrian Ildefonso, Zahabul Islam, Md Abu Jafar Rasel, Amanul Haque, Jihyun Kim, Fan Ren, Minghan Xian, Stephen J. Pearton

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

SiC and GaN power devices are used in the automotive, wireless, and industrial power markets, but their adoption into space and avionic applications is hindered by their susceptibility to permanent degradation and catastrophic failure from heavy-ion exposure. Efforts to space-qualify wide bandgap power devices have revealed that they are susceptible to damage from the high-energy, heavy-ion space radiation environment (galactic cosmic rays) that cannot be shielded. GaN and SiC transistors have shown failure susceptibility at about 50% of the rated voltage. SiC components have demonstrated susceptibility to radiation damage under heavy-ion single-event effects testing, reducing their utility in the space galactic cosmic ray (GCR) environment. In SiC-based Schottky diodes, catastrophic single-event burnout (SEB) and other single-event effects (SEE) have been observed at ∼40% of the rated operating voltage, as well as an unacceptable degradation in leakage current at ∼20% of the rated operating voltage.

Original language	English
Title of host publication	240th ECS Meeting - Gallium Nitride and Silicon Carbide Power Technologies 11
Publisher	IOP Publishing Ltd.
Pages	13-34
Number of pages	22
Edition	7
ISBN (Electronic)	9781607685395
DOIs	https://doi.org/10.1149/10407.0013ecst
Publication status	Published - 2021
Event	240th ECS Meeting - Orlando, United States Duration: 2021 Oct 10 → 2021 Oct 14

Publication series

Name	ECS Transactions
Number	7
Volume	104
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Conference

Conference	240th ECS Meeting
Country/Territory	United States
City	Orlando
Period	21/10/10 → 21/10/14

Bibliographical note

Funding Information:
Work performed as part of Interaction of Ionizing Radiation with Matter University Research Alliance (IIRM-URA), sponsored by the Department of the Defense, Defense Threat Reduction Agency under award HDTRA1-20-2-0002. The content of the information does not necessarily reflect the position or the policy of the federal government, and no official endorsement should be inferred.

Publisher Copyright:
© 2021 ECS - The Electrochemical Society.

ASJC Scopus subject areas

General Engineering

Access to Document

10.1149/10407.0013ecst

Cite this

Khachatrian, A., Ildefonso, A., Islam, Z., Rasel, M. A. J., Haque, A., Kim, J., Ren, F., Xian, M., & Pearton, S. J. (2021). Total Dose Effects and Single Event Upsets during Radiation Damage of GaN and SiC. In 240th ECS Meeting - Gallium Nitride and Silicon Carbide Power Technologies 11 (7 ed., pp. 13-34). (ECS Transactions; Vol. 104, No. 7). IOP Publishing Ltd.. https://doi.org/10.1149/10407.0013ecst

Total Dose Effects and Single Event Upsets during Radiation Damage of GaN and SiC. / Khachatrian, Ani; Ildefonso, Adrian; Islam, Zahabul et al.
240th ECS Meeting - Gallium Nitride and Silicon Carbide Power Technologies 11. 7. ed. IOP Publishing Ltd., 2021. p. 13-34 (ECS Transactions; Vol. 104, No. 7).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Khachatrian, A, Ildefonso, A, Islam, Z, Rasel, MAJ, Haque, A, Kim, J, Ren, F, Xian, M & Pearton, SJ 2021, Total Dose Effects and Single Event Upsets during Radiation Damage of GaN and SiC. in 240th ECS Meeting - Gallium Nitride and Silicon Carbide Power Technologies 11. 7 edn, ECS Transactions, no. 7, vol. 104, IOP Publishing Ltd., pp. 13-34, 240th ECS Meeting, Orlando, United States, 21/10/10. https://doi.org/10.1149/10407.0013ecst

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abstract = "SiC and GaN power devices are used in the automotive, wireless, and industrial power markets, but their adoption into space and avionic applications is hindered by their susceptibility to permanent degradation and catastrophic failure from heavy-ion exposure. Efforts to space-qualify wide bandgap power devices have revealed that they are susceptible to damage from the high-energy, heavy-ion space radiation environment (galactic cosmic rays) that cannot be shielded. GaN and SiC transistors have shown failure susceptibility at about 50% of the rated voltage. SiC components have demonstrated susceptibility to radiation damage under heavy-ion single-event effects testing, reducing their utility in the space galactic cosmic ray (GCR) environment. In SiC-based Schottky diodes, catastrophic single-event burnout (SEB) and other single-event effects (SEE) have been observed at ∼40% of the rated operating voltage, as well as an unacceptable degradation in leakage current at ∼20% of the rated operating voltage.",

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AU - Ren, Fan

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AU - Pearton, Stephen J.

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N2 - SiC and GaN power devices are used in the automotive, wireless, and industrial power markets, but their adoption into space and avionic applications is hindered by their susceptibility to permanent degradation and catastrophic failure from heavy-ion exposure. Efforts to space-qualify wide bandgap power devices have revealed that they are susceptible to damage from the high-energy, heavy-ion space radiation environment (galactic cosmic rays) that cannot be shielded. GaN and SiC transistors have shown failure susceptibility at about 50% of the rated voltage. SiC components have demonstrated susceptibility to radiation damage under heavy-ion single-event effects testing, reducing their utility in the space galactic cosmic ray (GCR) environment. In SiC-based Schottky diodes, catastrophic single-event burnout (SEB) and other single-event effects (SEE) have been observed at ∼40% of the rated operating voltage, as well as an unacceptable degradation in leakage current at ∼20% of the rated operating voltage.

AB - SiC and GaN power devices are used in the automotive, wireless, and industrial power markets, but their adoption into space and avionic applications is hindered by their susceptibility to permanent degradation and catastrophic failure from heavy-ion exposure. Efforts to space-qualify wide bandgap power devices have revealed that they are susceptible to damage from the high-energy, heavy-ion space radiation environment (galactic cosmic rays) that cannot be shielded. GaN and SiC transistors have shown failure susceptibility at about 50% of the rated voltage. SiC components have demonstrated susceptibility to radiation damage under heavy-ion single-event effects testing, reducing their utility in the space galactic cosmic ray (GCR) environment. In SiC-based Schottky diodes, catastrophic single-event burnout (SEB) and other single-event effects (SEE) have been observed at ∼40% of the rated operating voltage, as well as an unacceptable degradation in leakage current at ∼20% of the rated operating voltage.

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Total Dose Effects and Single Event Upsets during Radiation Damage of GaN and SiC

Abstract

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Bibliographical note

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