Transfer-Free Growth of Multilayer Graphene Using Self-Assembled Monolayers

Gwangseok Yang, Hong Yeol Kim, Soohwan Jang, Jihyun Kim

Research output: Contribution to journalArticlepeer-review

23 Citations (Scopus)


Large-area graphene needs to be directly synthesized on the desired substrates without using a transfer process so that it can easily be used in industrial applications. However, the development of a direct method for graphene growth on an arbitrary substrate remains challenging. Here, we demonstrate a bottom-up and transfer-free growth method for preparing multilayer graphene using a self-assembled monolayer (trimethoxy phenylsilane) as the carbon source. Graphene was directly grown on various substrates such as SiO2/Si, quartz, GaN, and textured Si by a simple thermal annealing process employing catalytic metal encapsulation. To determine the optimal growth conditions, experimental parameters such as the choice of catalytic metal, growth temperatures, and gas flow rate were investigated. The optical transmittance at 550 nm and the sheet resistance of the prepared transfer-free graphene are 84.3% and 3500 ω, respectively. The synthesized graphene samples were fabricated into chemical sensors. High and fast responses to both NO2 and NH3 gas molecules were observed. The transfer-free graphene growth method proposed in this study is highly compatible with previously established fabrication systems, thereby opening up new possibilities for using graphene in versatile applications.

Original languageEnglish
Pages (from-to)27115-27121
Number of pages7
JournalACS Applied Materials and Interfaces
Issue number40
Publication statusPublished - 2016 Oct 12

Bibliographical note

Publisher Copyright:
© 2016 American Chemical Society.


  • chemical sensor
  • graphene
  • multilayer
  • self-assembled monolayer
  • transfer-free

ASJC Scopus subject areas

  • General Materials Science


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