Transfer of transition-metal dichalcogenide circuits onto arbitrary substrates for flexible device applications

Hyebin Lee; Kookjin Lee; Yanghee Kim; Hyunjin Ji; Junhee Choi; Minsik Kim; Jae Pyoung Ahn; Gyu Tae Kim

doi:10.1039/c9nr05065e

Transfer of transition-metal dichalcogenide circuits onto arbitrary substrates for flexible device applications

Hyebin Lee, Kookjin Lee, Yanghee Kim, Hyunjin Ji, Junhee Choi, Minsik Kim, Jae Pyoung Ahn, Gyu Tae Kim

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Transition-metal dichalcogenide (TMD) materials with two-dimensional layered structures and stable surfaces are well suited for transparent and flexible device applications. In order to completely utilize the advantages of thickness control and fabrication of various heterostructure stacks, we proposed a transfer method of TMD field-effect transistors (FETs) and TMD complementary metal-oxide-semiconductor (CMOS) circuits from a Si/SiO₂ substrate to a flexible substrate. We compared the characteristics of transferred MoS₂ and WSe₂ FETs with those of the corresponding devices transferred after channel passivation with an Al₂O₃ layer on a flexible substrate. Al₂O₃ passivation further stabilized the transfer of the entire device with electrodes. A CMOS circuit with MoS₂ and WSe₂ materials could be successfully transferred to a polyethylene terephthalate substrate after the channel passivation. This implies that TMD circuits can be easily fabricated on polymer substrates, which makes them suitable for use in semiconductor processes, for various applications.

Original language	English
Pages (from-to)	22118-22124
Number of pages	7
Journal	Nanoscale
Volume	11
Issue number	45
DOIs	https://doi.org/10.1039/c9nr05065e
Publication status	Published - 2019 Dec 7

Bibliographical note

Funding Information:
This work was supported by a grant to the Terahertz Electronic Device Research Laboratory funded by the Defense Acquisition Program Administration and by the Agency for Defense Development (UD180025RD).

Publisher Copyright:
© 2019 The Royal Society of Chemistry.

ASJC Scopus subject areas

General Materials Science

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title = "Transfer of transition-metal dichalcogenide circuits onto arbitrary substrates for flexible device applications",

abstract = "Transition-metal dichalcogenide (TMD) materials with two-dimensional layered structures and stable surfaces are well suited for transparent and flexible device applications. In order to completely utilize the advantages of thickness control and fabrication of various heterostructure stacks, we proposed a transfer method of TMD field-effect transistors (FETs) and TMD complementary metal-oxide-semiconductor (CMOS) circuits from a Si/SiO2 substrate to a flexible substrate. We compared the characteristics of transferred MoS2 and WSe2 FETs with those of the corresponding devices transferred after channel passivation with an Al2O3 layer on a flexible substrate. Al2O3 passivation further stabilized the transfer of the entire device with electrodes. A CMOS circuit with MoS2 and WSe2 materials could be successfully transferred to a polyethylene terephthalate substrate after the channel passivation. This implies that TMD circuits can be easily fabricated on polymer substrates, which makes them suitable for use in semiconductor processes, for various applications.",

author = "Hyebin Lee and Kookjin Lee and Yanghee Kim and Hyunjin Ji and Junhee Choi and Minsik Kim and Ahn, {Jae Pyoung} and Kim, {Gyu Tae}",

note = "Funding Information: This work was supported by a grant to the Terahertz Electronic Device Research Laboratory funded by the Defense Acquisition Program Administration and by the Agency for Defense Development (UD180025RD). Publisher Copyright: {\textcopyright} 2019 The Royal Society of Chemistry.",

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T1 - Transfer of transition-metal dichalcogenide circuits onto arbitrary substrates for flexible device applications

AU - Lee, Hyebin

AU - Lee, Kookjin

AU - Kim, Yanghee

AU - Ji, Hyunjin

AU - Choi, Junhee

AU - Kim, Minsik

AU - Ahn, Jae Pyoung

AU - Kim, Gyu Tae

N1 - Funding Information: This work was supported by a grant to the Terahertz Electronic Device Research Laboratory funded by the Defense Acquisition Program Administration and by the Agency for Defense Development (UD180025RD). Publisher Copyright: © 2019 The Royal Society of Chemistry.

PY - 2019/12/7

Y1 - 2019/12/7

N2 - Transition-metal dichalcogenide (TMD) materials with two-dimensional layered structures and stable surfaces are well suited for transparent and flexible device applications. In order to completely utilize the advantages of thickness control and fabrication of various heterostructure stacks, we proposed a transfer method of TMD field-effect transistors (FETs) and TMD complementary metal-oxide-semiconductor (CMOS) circuits from a Si/SiO2 substrate to a flexible substrate. We compared the characteristics of transferred MoS2 and WSe2 FETs with those of the corresponding devices transferred after channel passivation with an Al2O3 layer on a flexible substrate. Al2O3 passivation further stabilized the transfer of the entire device with electrodes. A CMOS circuit with MoS2 and WSe2 materials could be successfully transferred to a polyethylene terephthalate substrate after the channel passivation. This implies that TMD circuits can be easily fabricated on polymer substrates, which makes them suitable for use in semiconductor processes, for various applications.

AB - Transition-metal dichalcogenide (TMD) materials with two-dimensional layered structures and stable surfaces are well suited for transparent and flexible device applications. In order to completely utilize the advantages of thickness control and fabrication of various heterostructure stacks, we proposed a transfer method of TMD field-effect transistors (FETs) and TMD complementary metal-oxide-semiconductor (CMOS) circuits from a Si/SiO2 substrate to a flexible substrate. We compared the characteristics of transferred MoS2 and WSe2 FETs with those of the corresponding devices transferred after channel passivation with an Al2O3 layer on a flexible substrate. Al2O3 passivation further stabilized the transfer of the entire device with electrodes. A CMOS circuit with MoS2 and WSe2 materials could be successfully transferred to a polyethylene terephthalate substrate after the channel passivation. This implies that TMD circuits can be easily fabricated on polymer substrates, which makes them suitable for use in semiconductor processes, for various applications.

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JO - Nanoscale

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ER -

Transfer of transition-metal dichalcogenide circuits onto arbitrary substrates for flexible device applications

Abstract

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