Transfer of transition-metal dichalcogenide circuits onto arbitrary substrates for flexible device applications

Hyebin Lee, Kookjin Lee, Yanghee Kim, Hyunjin Ji, Junhee Choi, Minsik Kim, Jae Pyoung Ahn, Gyu Tae Kim

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


Transition-metal dichalcogenide (TMD) materials with two-dimensional layered structures and stable surfaces are well suited for transparent and flexible device applications. In order to completely utilize the advantages of thickness control and fabrication of various heterostructure stacks, we proposed a transfer method of TMD field-effect transistors (FETs) and TMD complementary metal-oxide-semiconductor (CMOS) circuits from a Si/SiO2 substrate to a flexible substrate. We compared the characteristics of transferred MoS2 and WSe2 FETs with those of the corresponding devices transferred after channel passivation with an Al2O3 layer on a flexible substrate. Al2O3 passivation further stabilized the transfer of the entire device with electrodes. A CMOS circuit with MoS2 and WSe2 materials could be successfully transferred to a polyethylene terephthalate substrate after the channel passivation. This implies that TMD circuits can be easily fabricated on polymer substrates, which makes them suitable for use in semiconductor processes, for various applications.

Original languageEnglish
Pages (from-to)22118-22124
Number of pages7
Issue number45
Publication statusPublished - 2019 Dec 7

Bibliographical note

Funding Information:
This work was supported by a grant to the Terahertz Electronic Device Research Laboratory funded by the Defense Acquisition Program Administration and by the Agency for Defense Development (UD180025RD).

Publisher Copyright:
© 2019 The Royal Society of Chemistry.

ASJC Scopus subject areas

  • General Materials Science


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