Transfer of transition-metal dichalcogenide circuits onto arbitrary substrates for flexible device applications

Keyphrases

• Device Application 100%
• Flexible Devices 100%
• Transition Metal Dichalcogenides 100%
• Arbitrary Substrates 100%
• Molybdenite 50%
• Flexible Substrate 50%
• Field-effect Transistors 50%
• Passivation 50%
• Complementary Metal Oxide Semiconductor 50%
• WSe2 50%
• Heterostructure 25%
• Si-SiO2 25%
• SiO2 Substrate 25%
• Transfer Method 25%
• Polyethylene Terephthalate Substrate 25%
• Al2O3 Layer 25%
• Polymer Substrate 25%
• Semiconductor Process 25%
• Stable Surface 25%
• Thickness Control 25%
• Structured Surface 25%
• Al2O3 Passivation 25%
• Transparent Devices 25%
• Two-dimensional Layered Structure 25%
• Transition Metal Dichalcogenide Materials 25%

Material Science

• Electronic Circuit 100%
• Transition Metal Dichalcogenide 100%
• Al2O3 40%
• Field Effect Transistor 40%
• Complementary Metal-Oxide-Semiconductor Device 40%
• Heterojunction 20%
• Polyethylene Terephthalate 20%