Transistor design and application considerations for >200-GHz SiGe HBTs

Greg Freeman; Basanth Jagannathan; Shwu Jen Jeng; Jae Sung Rieh; Andreas D. Stricker; David C. Ahlgren; Seshadri Subbanna

doi:10.1109/TED.2003.810467

Transistor design and application considerations for >200-GHz SiGe HBTs

Greg Freeman, Basanth Jagannathan, Shwu Jen Jeng, Jae Sung Rieh, Andreas D. Stricker, David C. Ahlgren, Seshadri Subbanna

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

SiGe HBT transistors achieving over 200 GHz f_T and f_MAX are demonstrated in this paper. Techniques and trends in SiGe HBT design are discussed. Processing techniques available to silicon technologies are utilized to minimize parasitic resistances and capacitances and thereby establish raw speeds exceeding III-V devices despite the higher mobility in those materials. Higher current densities and greater avalanche currents, which are required for establishing such high performance, are discussed as they relate to device self-heating and reliability and the degradation of the devices. Simple circuit results are shown, demonstrating 4.2-ps ring-oscillator delays.

Original language	English
Pages (from-to)	645-655
Number of pages	11
Journal	IEEE Transactions on Electron Devices
Volume	50
Issue number	3
DOIs	https://doi.org/10.1109/TED.2003.810467
Publication status	Published - 2003 Mar
Externally published	Yes

Keywords

BiCMOS integrated circuits
Bipolar transistors
Heterojunctions
Semiconductor devices

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2003.810467

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abstract = "SiGe HBT transistors achieving over 200 GHz fT and fMAX are demonstrated in this paper. Techniques and trends in SiGe HBT design are discussed. Processing techniques available to silicon technologies are utilized to minimize parasitic resistances and capacitances and thereby establish raw speeds exceeding III-V devices despite the higher mobility in those materials. Higher current densities and greater avalanche currents, which are required for establishing such high performance, are discussed as they relate to device self-heating and reliability and the degradation of the devices. Simple circuit results are shown, demonstrating 4.2-ps ring-oscillator delays.",

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AU - Freeman, Greg

AU - Jagannathan, Basanth

AU - Jeng, Shwu Jen

AU - Rieh, Jae Sung

AU - Stricker, Andreas D.

AU - Ahlgren, David C.

AU - Subbanna, Seshadri

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N2 - SiGe HBT transistors achieving over 200 GHz fT and fMAX are demonstrated in this paper. Techniques and trends in SiGe HBT design are discussed. Processing techniques available to silicon technologies are utilized to minimize parasitic resistances and capacitances and thereby establish raw speeds exceeding III-V devices despite the higher mobility in those materials. Higher current densities and greater avalanche currents, which are required for establishing such high performance, are discussed as they relate to device self-heating and reliability and the degradation of the devices. Simple circuit results are shown, demonstrating 4.2-ps ring-oscillator delays.

AB - SiGe HBT transistors achieving over 200 GHz fT and fMAX are demonstrated in this paper. Techniques and trends in SiGe HBT design are discussed. Processing techniques available to silicon technologies are utilized to minimize parasitic resistances and capacitances and thereby establish raw speeds exceeding III-V devices despite the higher mobility in those materials. Higher current densities and greater avalanche currents, which are required for establishing such high performance, are discussed as they relate to device self-heating and reliability and the degradation of the devices. Simple circuit results are shown, demonstrating 4.2-ps ring-oscillator delays.

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Transistor design and application considerations for >200-GHz SiGe HBTs

Abstract

Keywords

ASJC Scopus subject areas

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