Transparent and flexible thin-film transistors with channel layers composed of sintered HgTe nanocrystals

Jaewon Jang; Kyoungah Cho; Sang Heon Lee; Sangsig Kim

doi:10.1088/0957-4484/19/01/015204

Transparent and flexible thin-film transistors with channel layers composed of sintered HgTe nanocrystals

Jaewon Jang^*
, Kyoungah Cho
, Sang Heon Lee
, Sangsig Kim

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

42 Citations (Scopus)

Abstract

Transparent and flexible thin film transistors (TFTs) with channel layers composed of sintered HgTe nanocrystals were fabricated on top of UV/ozone treated plastic substrates and their electrical properties were characterized. A representative TFT with a channel layer composed of sintered HgTe nanocrystals revealed typical p-type characteristics, an on/off current ratio of ∼10 ³ and a field-effect mobility of 4.1 cm² V^-1 s^-1. When the substrate was bent until the bending radius of the substrate reached 2.4 cm, which corresponded to a strain of 0.83% that the HgTe thin film experienced, the TFT exhibited an on/off current ratio of ∼10 ³ and a field-effect mobility of 4.0 cm² V^-1 s^-1.

Original language	English
Article number	015204
Journal	Nanotechnology
Volume	19
Issue number	1
DOIs	https://doi.org/10.1088/0957-4484/19/01/015204
Publication status	Published - 2008 Jan 9

ASJC Scopus subject areas

Bioengineering
General Chemistry
General Materials Science
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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title = "Transparent and flexible thin-film transistors with channel layers composed of sintered HgTe nanocrystals",

abstract = "Transparent and flexible thin film transistors (TFTs) with channel layers composed of sintered HgTe nanocrystals were fabricated on top of UV/ozone treated plastic substrates and their electrical properties were characterized. A representative TFT with a channel layer composed of sintered HgTe nanocrystals revealed typical p-type characteristics, an on/off current ratio of ∼10 3 and a field-effect mobility of 4.1 cm2 V-1 s-1. When the substrate was bent until the bending radius of the substrate reached 2.4 cm, which corresponded to a strain of 0.83\% that the HgTe thin film experienced, the TFT exhibited an on/off current ratio of ∼10 3 and a field-effect mobility of 4.0 cm2 V-1 s-1.",

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AU - Jang, Jaewon

AU - Cho, Kyoungah

AU - Lee, Sang Heon

AU - Kim, Sangsig

PY - 2008/1/9

Y1 - 2008/1/9

N2 - Transparent and flexible thin film transistors (TFTs) with channel layers composed of sintered HgTe nanocrystals were fabricated on top of UV/ozone treated plastic substrates and their electrical properties were characterized. A representative TFT with a channel layer composed of sintered HgTe nanocrystals revealed typical p-type characteristics, an on/off current ratio of ∼10 3 and a field-effect mobility of 4.1 cm2 V-1 s-1. When the substrate was bent until the bending radius of the substrate reached 2.4 cm, which corresponded to a strain of 0.83% that the HgTe thin film experienced, the TFT exhibited an on/off current ratio of ∼10 3 and a field-effect mobility of 4.0 cm2 V-1 s-1.

AB - Transparent and flexible thin film transistors (TFTs) with channel layers composed of sintered HgTe nanocrystals were fabricated on top of UV/ozone treated plastic substrates and their electrical properties were characterized. A representative TFT with a channel layer composed of sintered HgTe nanocrystals revealed typical p-type characteristics, an on/off current ratio of ∼10 3 and a field-effect mobility of 4.1 cm2 V-1 s-1. When the substrate was bent until the bending radius of the substrate reached 2.4 cm, which corresponded to a strain of 0.83% that the HgTe thin film experienced, the TFT exhibited an on/off current ratio of ∼10 3 and a field-effect mobility of 4.0 cm2 V-1 s-1.

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Transparent and flexible thin-film transistors with channel layers composed of sintered HgTe nanocrystals

Abstract

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