Transparent conducting oxide electrodes for novel metal oxide gas sensors

Young Seok Shim, Hi Gyu Moon, Do Hong Kim, Ho Won Jang, Chong Yun Kang, Young Soo Yoon, Soek Jin Yoon

Research output: Contribution to journalArticlepeer-review

28 Citations (Scopus)

Abstract

We report fabrication and gas sensing properties of semiconducting metal oxide gas sensors using conducting oxide electrodes. Indium-tin oxide (ITO) and aluminum-doped zinc oxide (AZO) films are used to replace Pt electrodes in WO3 or SnO2 thin-film gas sensors. Before and after thermal annealing at 300 °C for 3200 min, the resistivity of the ITO film increases from 1.3 × 10-4 to 7.0 × 10-4 Ω cm, whereas the AZO film shows a significant increase in resistivity from 2.0 × 10-3 to 5.1 × 101 Ω cm due to the annihilation of oxygen vacancies in the film. Upon exposure to 50 ppm CO at 300 °C, WO3 or SnO2 thin-film sensors with ITO interdigitated electrodes (IDEs) on glass substrates display higher responses than sensors with Pt IDEs, attributed to the low-resistance ohmic contacts between the electrode (ITO) and the sensing material (WO3 or SnO 2). The reproducible response, the concentration-dependent modulation in sensitivity, and a sub-ppm detection limit indicates the reliable operation of sensors made with ITO IDEs. The high transmittance, exceeding 75%, of the sensors at visible wavelengths holds promise for future applications to transparent gas sensors.

Original languageEnglish
Pages (from-to)357-363
Number of pages7
JournalSensors and Actuators, B: Chemical
Volume160
Issue number1
DOIs
Publication statusPublished - 2011 Dec 15
Externally publishedYes

Keywords

  • Aluminum-doped zinc oxide
  • Gas sensors
  • Indium-tin oxide
  • Ohmic contact
  • Transparent conducting oxides

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

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