Transparent conducting oxide electrodes for novel metal oxide gas sensors

Young Seok Shim; Hi Gyu Moon; Do Hong Kim; Ho Won Jang; Chong Yun Kang; Young Soo Yoon; Soek Jin Yoon

doi:10.1016/j.snb.2011.07.061

Transparent conducting oxide electrodes for novel metal oxide gas sensors

Young Seok Shim, Hi Gyu Moon, Do Hong Kim, Ho Won Jang, Chong Yun Kang, Young Soo Yoon, Soek Jin Yoon

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

We report fabrication and gas sensing properties of semiconducting metal oxide gas sensors using conducting oxide electrodes. Indium-tin oxide (ITO) and aluminum-doped zinc oxide (AZO) films are used to replace Pt electrodes in WO₃ or SnO₂ thin-film gas sensors. Before and after thermal annealing at 300 °C for 3200 min, the resistivity of the ITO film increases from 1.3 × 10^-4 to 7.0 × 10^-4 Ω cm, whereas the AZO film shows a significant increase in resistivity from 2.0 × 10^-3 to 5.1 × 10¹ Ω cm due to the annihilation of oxygen vacancies in the film. Upon exposure to 50 ppm CO at 300 °C, WO₃ or SnO₂ thin-film sensors with ITO interdigitated electrodes (IDEs) on glass substrates display higher responses than sensors with Pt IDEs, attributed to the low-resistance ohmic contacts between the electrode (ITO) and the sensing material (WO₃ or SnO ₂). The reproducible response, the concentration-dependent modulation in sensitivity, and a sub-ppm detection limit indicates the reliable operation of sensors made with ITO IDEs. The high transmittance, exceeding 75%, of the sensors at visible wavelengths holds promise for future applications to transparent gas sensors.

Original language	English
Pages (from-to)	357-363
Number of pages	7
Journal	Sensors and Actuators, B: Chemical
Volume	160
Issue number	1
DOIs	https://doi.org/10.1016/j.snb.2011.07.061
Publication status	Published - 2011 Dec 15

Bibliographical note

Funding Information:
This work was financially supported by the Core Technology of Materials Research and Development Program of the Korea Ministry of Intelligence and Economy (Grant No. K0004114 ) and a KIST research program (Grant No. 2E22121).

Keywords

Aluminum-doped zinc oxide
Gas sensors
Indium-tin oxide
Ohmic contact
Transparent conducting oxides

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films
Metals and Alloys
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.snb.2011.07.061

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@article{aa80c4f458074bd2a7808df0d79756a3,

title = "Transparent conducting oxide electrodes for novel metal oxide gas sensors",

abstract = "We report fabrication and gas sensing properties of semiconducting metal oxide gas sensors using conducting oxide electrodes. Indium-tin oxide (ITO) and aluminum-doped zinc oxide (AZO) films are used to replace Pt electrodes in WO3 or SnO2 thin-film gas sensors. Before and after thermal annealing at 300 °C for 3200 min, the resistivity of the ITO film increases from 1.3 × 10-4 to 7.0 × 10-4 Ω cm, whereas the AZO film shows a significant increase in resistivity from 2.0 × 10-3 to 5.1 × 101 Ω cm due to the annihilation of oxygen vacancies in the film. Upon exposure to 50 ppm CO at 300 °C, WO3 or SnO2 thin-film sensors with ITO interdigitated electrodes (IDEs) on glass substrates display higher responses than sensors with Pt IDEs, attributed to the low-resistance ohmic contacts between the electrode (ITO) and the sensing material (WO3 or SnO 2). The reproducible response, the concentration-dependent modulation in sensitivity, and a sub-ppm detection limit indicates the reliable operation of sensors made with ITO IDEs. The high transmittance, exceeding 75%, of the sensors at visible wavelengths holds promise for future applications to transparent gas sensors.",

keywords = "Aluminum-doped zinc oxide, Gas sensors, Indium-tin oxide, Ohmic contact, Transparent conducting oxides",

author = "Shim, {Young Seok} and Moon, {Hi Gyu} and Kim, {Do Hong} and Jang, {Ho Won} and Kang, {Chong Yun} and Yoon, {Young Soo} and Yoon, {Soek Jin}",

note = "Funding Information: This work was financially supported by the Core Technology of Materials Research and Development Program of the Korea Ministry of Intelligence and Economy (Grant No. K0004114 ) and a KIST research program (Grant No. 2E22121). ",

year = "2011",

month = dec,

day = "15",

doi = "10.1016/j.snb.2011.07.061",

language = "English",

volume = "160",

pages = "357--363",

journal = "Sensors and Actuators, B: Chemical",

issn = "0925-4005",

publisher = "Elsevier B.V.",

number = "1",

}

TY - JOUR

T1 - Transparent conducting oxide electrodes for novel metal oxide gas sensors

AU - Shim, Young Seok

AU - Moon, Hi Gyu

AU - Kim, Do Hong

AU - Jang, Ho Won

AU - Kang, Chong Yun

AU - Yoon, Young Soo

AU - Yoon, Soek Jin

N1 - Funding Information: This work was financially supported by the Core Technology of Materials Research and Development Program of the Korea Ministry of Intelligence and Economy (Grant No. K0004114 ) and a KIST research program (Grant No. 2E22121).

PY - 2011/12/15

Y1 - 2011/12/15

N2 - We report fabrication and gas sensing properties of semiconducting metal oxide gas sensors using conducting oxide electrodes. Indium-tin oxide (ITO) and aluminum-doped zinc oxide (AZO) films are used to replace Pt electrodes in WO3 or SnO2 thin-film gas sensors. Before and after thermal annealing at 300 °C for 3200 min, the resistivity of the ITO film increases from 1.3 × 10-4 to 7.0 × 10-4 Ω cm, whereas the AZO film shows a significant increase in resistivity from 2.0 × 10-3 to 5.1 × 101 Ω cm due to the annihilation of oxygen vacancies in the film. Upon exposure to 50 ppm CO at 300 °C, WO3 or SnO2 thin-film sensors with ITO interdigitated electrodes (IDEs) on glass substrates display higher responses than sensors with Pt IDEs, attributed to the low-resistance ohmic contacts between the electrode (ITO) and the sensing material (WO3 or SnO 2). The reproducible response, the concentration-dependent modulation in sensitivity, and a sub-ppm detection limit indicates the reliable operation of sensors made with ITO IDEs. The high transmittance, exceeding 75%, of the sensors at visible wavelengths holds promise for future applications to transparent gas sensors.

AB - We report fabrication and gas sensing properties of semiconducting metal oxide gas sensors using conducting oxide electrodes. Indium-tin oxide (ITO) and aluminum-doped zinc oxide (AZO) films are used to replace Pt electrodes in WO3 or SnO2 thin-film gas sensors. Before and after thermal annealing at 300 °C for 3200 min, the resistivity of the ITO film increases from 1.3 × 10-4 to 7.0 × 10-4 Ω cm, whereas the AZO film shows a significant increase in resistivity from 2.0 × 10-3 to 5.1 × 101 Ω cm due to the annihilation of oxygen vacancies in the film. Upon exposure to 50 ppm CO at 300 °C, WO3 or SnO2 thin-film sensors with ITO interdigitated electrodes (IDEs) on glass substrates display higher responses than sensors with Pt IDEs, attributed to the low-resistance ohmic contacts between the electrode (ITO) and the sensing material (WO3 or SnO 2). The reproducible response, the concentration-dependent modulation in sensitivity, and a sub-ppm detection limit indicates the reliable operation of sensors made with ITO IDEs. The high transmittance, exceeding 75%, of the sensors at visible wavelengths holds promise for future applications to transparent gas sensors.

KW - Aluminum-doped zinc oxide

KW - Gas sensors

KW - Indium-tin oxide

KW - Ohmic contact

KW - Transparent conducting oxides

UR - http://www.scopus.com/inward/record.url?scp=81155152447&partnerID=8YFLogxK

U2 - 10.1016/j.snb.2011.07.061

DO - 10.1016/j.snb.2011.07.061

M3 - Article

AN - SCOPUS:81155152447

SN - 0925-4005

VL - 160

SP - 357

EP - 363

JO - Sensors and Actuators, B: Chemical

JF - Sensors and Actuators, B: Chemical

IS - 1

ER -

Transparent conducting oxide electrodes for novel metal oxide gas sensors

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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