Transparent conductive oxide films mixed with gallium oxide nanoparticle/single-walled carbon nanotube layer for deep ultraviolet light-emitting diodes

Kyoeng Heon Kim; Ho Myoung An; Hee Dong Kim; Tae Geun Kim

doi:10.1186/1556-276X-8-507

Transparent conductive oxide films mixed with gallium oxide nanoparticle/single-walled carbon nanotube layer for deep ultraviolet light-emitting diodes

Kyoeng Heon Kim, Ho Myoung An, Hee Dong Kim, Tae Geun Kim

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

We propose a transparent conductive oxide electrode scheme of gallium oxide nanoparticle mixed with a single-walled carbon nanotube (Ga₂O₃ NP/SWNT) layer for deep ultraviolet light-emitting diodes using spin and dipping methods. We investigated the electrical, optical and morphological properties of the Ga₂O₃ NP/SWNT layers by increasing the thickness of SWNTs via multiple dipping processes. Compared with the undoped Ga₂O₃ films (current level 9.9 × 10^-9 A @ 1 V, transmittance 68% @ 280 nm), the current level flowing in the Ga₂O₃ NP/SWNT increased by approximately 4 × 10⁵ times and the transmittance improved by 9% after 15 times dip-coating (current level 4 × 10^-4 A at 1 V; transmittance 77.0% at 280 nm). These improvements result from both native high transparency of Ga₂O₃ NPs and high conductivity and effective current spreading of SWNTs.

Original language	English
Article number	507
Pages (from-to)	1-6
Number of pages	6
Journal	Nanoscale Research Letters
Volume	8
Issue number	1
DOIs	https://doi.org/10.1186/1556-276X-8-507
Publication status	Published - 2013

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) Grant funded by the Korean government (No. 2011–0028769).

Keywords

Single-walled carbon nanotubes (SWNTs)
Ultraviolet transparent conductive oxide (UV TCO)

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics

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10.1186/1556-276X-8-507

Cite this

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title = "Transparent conductive oxide films mixed with gallium oxide nanoparticle/single-walled carbon nanotube layer for deep ultraviolet light-emitting diodes",

abstract = "We propose a transparent conductive oxide electrode scheme of gallium oxide nanoparticle mixed with a single-walled carbon nanotube (Ga2O3 NP/SWNT) layer for deep ultraviolet light-emitting diodes using spin and dipping methods. We investigated the electrical, optical and morphological properties of the Ga2O3 NP/SWNT layers by increasing the thickness of SWNTs via multiple dipping processes. Compared with the undoped Ga2O3 films (current level 9.9 × 10-9 A @ 1 V, transmittance 68% @ 280 nm), the current level flowing in the Ga2O3 NP/SWNT increased by approximately 4 × 105 times and the transmittance improved by 9% after 15 times dip-coating (current level 4 × 10-4 A at 1 V; transmittance 77.0% at 280 nm). These improvements result from both native high transparency of Ga2O3 NPs and high conductivity and effective current spreading of SWNTs.",

keywords = "Single-walled carbon nanotubes (SWNTs), Ultraviolet transparent conductive oxide (UV TCO)",

author = "Kim, {Kyoeng Heon} and An, {Ho Myoung} and Kim, {Hee Dong} and Kim, {Tae Geun}",

note = "Funding Information: This work was supported by the National Research Foundation of Korea (NRF) Grant funded by the Korean government (No. 2011–0028769).",

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doi = "10.1186/1556-276X-8-507",

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AU - Kim, Kyoeng Heon

AU - An, Ho Myoung

AU - Kim, Hee Dong

AU - Kim, Tae Geun

N1 - Funding Information: This work was supported by the National Research Foundation of Korea (NRF) Grant funded by the Korean government (No. 2011–0028769).

PY - 2013

Y1 - 2013

N2 - We propose a transparent conductive oxide electrode scheme of gallium oxide nanoparticle mixed with a single-walled carbon nanotube (Ga2O3 NP/SWNT) layer for deep ultraviolet light-emitting diodes using spin and dipping methods. We investigated the electrical, optical and morphological properties of the Ga2O3 NP/SWNT layers by increasing the thickness of SWNTs via multiple dipping processes. Compared with the undoped Ga2O3 films (current level 9.9 × 10-9 A @ 1 V, transmittance 68% @ 280 nm), the current level flowing in the Ga2O3 NP/SWNT increased by approximately 4 × 105 times and the transmittance improved by 9% after 15 times dip-coating (current level 4 × 10-4 A at 1 V; transmittance 77.0% at 280 nm). These improvements result from both native high transparency of Ga2O3 NPs and high conductivity and effective current spreading of SWNTs.

AB - We propose a transparent conductive oxide electrode scheme of gallium oxide nanoparticle mixed with a single-walled carbon nanotube (Ga2O3 NP/SWNT) layer for deep ultraviolet light-emitting diodes using spin and dipping methods. We investigated the electrical, optical and morphological properties of the Ga2O3 NP/SWNT layers by increasing the thickness of SWNTs via multiple dipping processes. Compared with the undoped Ga2O3 films (current level 9.9 × 10-9 A @ 1 V, transmittance 68% @ 280 nm), the current level flowing in the Ga2O3 NP/SWNT increased by approximately 4 × 105 times and the transmittance improved by 9% after 15 times dip-coating (current level 4 × 10-4 A at 1 V; transmittance 77.0% at 280 nm). These improvements result from both native high transparency of Ga2O3 NPs and high conductivity and effective current spreading of SWNTs.

KW - Single-walled carbon nanotubes (SWNTs)

KW - Ultraviolet transparent conductive oxide (UV TCO)

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Transparent conductive oxide films mixed with gallium oxide nanoparticle/single-walled carbon nanotube layer for deep ultraviolet light-emitting diodes

Abstract

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Keywords

ASJC Scopus subject areas

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