Transparent, Flexible, and Low-Operating-Voltage Resistive Switching Memory Based on Al2O3/IZO Multilayer

Jaemin Park, Daihong Huh, Soomin Son, Wonjoong Kim, Sucheol Ju, Heon Lee

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

In this study, a different number of indium zinc oxide (IZO) interlayers are fabricated into Al2O3-based transparent resistive switching memory on a transparent indium tin oxide (ITO)/glass substrate at room temperature. Al2O3/IZO multilayer transparent memory has a transmittance of at least 65% in the wavelength range of 400–900 nm. In addition, the Al2O3/IZO multilayer transparent memory can achieve an electroforming voltage that is 35.7% lower than that of ITO/pure-Al2O3/IZO transparent memory. The fabricated Al2O3/IZO multilayer transparent memory exhibits typical bipolar resistive switching behavior, regardless of the number of IZO interlayers. Also, the fabricated Al2O3/IZO multilayer transparent memory has a low operating voltage within ±1.5 V. In addition, a flexible Al2O3/IZO multilayer transparent memory is fabricated using the same process on ITO-coated polyethylene terephthalate. The fabricated flexible transparent memory also maintains the resistive switching characteristics during the bending state.

Original languageEnglish
Article number2100118
JournalGlobal Challenges
Volume6
Issue number7
DOIs
Publication statusPublished - 2022 Jul

Bibliographical note

Publisher Copyright:
© 2022 The Authors. Global Challenges published by Wiley-VCH GmbH.

Keywords

  • Al O /IZO multilayer
  • electroforming
  • resistive switching
  • transparent memory

ASJC Scopus subject areas

  • General

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