Transparent InP Quantum Dot Light-Emitting Diodes with ZrO2 Electron Transport Layer and Indium Zinc Oxide Top Electrode

Hee Yeon Kim, Yu Jin Park, Jiwan Kim, Chul Jong Han, Jeongno Lee, Yohan Kim, Tonino Greco, Christian Ippen, Armin Wedel, Byeong Kwon Ju, Min Suk Oh

Research output: Contribution to journalArticlepeer-review

88 Citations (Scopus)

Abstract

Because of outstanding optical properties and non-vacuum solution processability of colloidal quantum dot (QD) semiconductors, many researchers have developed various light emitting diodes (LEDs) using QD materials. Until now, the Cd-based QD-LEDs have shown excellent properties, but the eco-friendly QD semiconductors have attracted many attentions due to the environmental regulation. And, since there are many issues about the reliability of conventional QD-LEDs with organic charge transport layers, a stable charge transport layer in various conditions must be developed for this reason. This study proposes the organic/inorganic hybrid QD-LEDs with Cd-free InP QDs as light emitting layer and inorganic ZrO2 nanoparticles as electron transport layer. The QD-LED with bottom emission structure shows the luminescence of 530 cd m-2 and the current efficiency of 1 cd/A. To realize the transparent QD-LED display, the two-step sputtering process of indium zinc oxide (IZO) top electrode is applied to the devices and this study could fabricate the transparent QD-LED device with the transmittance of more than 74% for whole device array. And when the IZO top electrode with high work-function is applied to top transparent anode, the device could maintain the current efficiency within the driving voltage range without well-known roll-off phenomenon in QD-LED devices.

Original languageEnglish
Pages (from-to)3454-3461
Number of pages8
JournalAdvanced Functional Materials
Volume26
Issue number20
DOIs
Publication statusPublished - 2016 May 24

Bibliographical note

Funding Information:
H.Y.K. and Y.J.P. contributed equally to this work. This work was supported by the Industrial Strategic Technology Development Program (10045145, Development of high performance (>70 cm2 V-1s-1) chalcogenide TFT backplane and cadmium-free highly efficient (>30 cd/A) hybrid EL material/devices) funded by the Ministry of Trade, Industry and Energy (MOTIE, Korea).

Publisher Copyright:
© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Keywords

  • InP
  • ZrO
  • light emitting diode
  • quantum dot
  • transparent

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Chemistry(all)
  • Materials Science(all)

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