Transparent multi-level resistive switching phenomena observed in ITO/RGO/ITO memory cells by the sol-gel dip-coating method

Hee Dong Kim, Min Ju Yun, Jae Hoon Lee, Kyoeng Heon Kim, Tae Geun Kim

    Research output: Contribution to journalArticlepeer-review

    61 Citations (Scopus)

    Abstract

    A reduced graphene oxide (RGO)-based transparent electronic memory cell with multi-level resistive switching (RS) was successfully realized by a dip-coating method. Using ITO/RGO/ITO structures, the memory device exhibited a transmittance above 80% (including the substrate) in the visible region and multi-level RS behavior in the 00, 01, 10, and 11 states by varying the pulse height from 2â €...V to 7â €...V. In the reliability test, the device exhibited a good endurance of over 10 5 cycles and a long data retention of over 10 5 â €...s at 85°C in each state. We believe that the RGO-based transparent memory presented in this work could be a milestone for future transparent electronic devices.

    Original languageEnglish
    Article number4614
    JournalScientific reports
    Volume4
    DOIs
    Publication statusPublished - 2014 Apr 9

    Bibliographical note

    Funding Information:
    This research was supported by a National Research Foundation of Korea (NRF) grant funded by the Ministry of Education, Science and Technology (MEST) (No. 2011-0028769, 2013-044975). The authors also thank for the support of the Samsung Semiconductor Research Center at Korea University.

    ASJC Scopus subject areas

    • General

    Fingerprint

    Dive into the research topics of 'Transparent multi-level resistive switching phenomena observed in ITO/RGO/ITO memory cells by the sol-gel dip-coating method'. Together they form a unique fingerprint.

    Cite this