Transparent multi-level resistive switching phenomena observed in ITO/RGO/ITO memory cells by the sol-gel dip-coating method

Hee Dong Kim; Min Ju Yun; Jae Hoon Lee; Kyoeng Heon Kim; Tae Geun Kim

doi:10.1038/srep04614

Transparent multi-level resistive switching phenomena observed in ITO/RGO/ITO memory cells by the sol-gel dip-coating method

Hee Dong Kim, Min Ju Yun, Jae Hoon Lee, Kyoeng Heon Kim, Tae Geun Kim

Research output: Contribution to journal › Article › peer-review

57 Citations (Scopus)

Abstract

A reduced graphene oxide (RGO)-based transparent electronic memory cell with multi-level resistive switching (RS) was successfully realized by a dip-coating method. Using ITO/RGO/ITO structures, the memory device exhibited a transmittance above 80% (including the substrate) in the visible region and multi-level RS behavior in the 00, 01, 10, and 11 states by varying the pulse height from 2â €...V to 7â €...V. In the reliability test, the device exhibited a good endurance of over 10 5 cycles and a long data retention of over 10 5 â €...s at 85°C in each state. We believe that the RGO-based transparent memory presented in this work could be a milestone for future transparent electronic devices.

Original language	English
Article number	4614
Journal	Scientific reports
Volume	4
DOIs	https://doi.org/10.1038/srep04614
Publication status	Published - 2014 Apr 9

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title = "Transparent multi-level resistive switching phenomena observed in ITO/RGO/ITO memory cells by the sol-gel dip-coating method",

abstract = "A reduced graphene oxide (RGO)-based transparent electronic memory cell with multi-level resistive switching (RS) was successfully realized by a dip-coating method. Using ITO/RGO/ITO structures, the memory device exhibited a transmittance above 80% (including the substrate) in the visible region and multi-level RS behavior in the 00, 01, 10, and 11 states by varying the pulse height from 2{\^a} €...V to 7{\^a} €...V. In the reliability test, the device exhibited a good endurance of over 10 5 cycles and a long data retention of over 10 5 {\^a} €...s at 85°C in each state. We believe that the RGO-based transparent memory presented in this work could be a milestone for future transparent electronic devices.",

author = "Kim, {Hee Dong} and Yun, {Min Ju} and Lee, {Jae Hoon} and Kim, {Kyoeng Heon} and Kim, {Tae Geun}",

note = "Funding Information: This research was supported by a National Research Foundation of Korea (NRF) grant funded by the Ministry of Education, Science and Technology (MEST) (No. 2011-0028769, 2013-044975). The authors also thank for the support of the Samsung Semiconductor Research Center at Korea University.",

year = "2014",

month = apr,

day = "9",

doi = "10.1038/srep04614",

language = "English",

volume = "4",

journal = "Scientific Reports",

issn = "2045-2322",

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T1 - Transparent multi-level resistive switching phenomena observed in ITO/RGO/ITO memory cells by the sol-gel dip-coating method

AU - Kim, Hee Dong

AU - Yun, Min Ju

AU - Lee, Jae Hoon

AU - Kim, Kyoeng Heon

AU - Kim, Tae Geun

N1 - Funding Information: This research was supported by a National Research Foundation of Korea (NRF) grant funded by the Ministry of Education, Science and Technology (MEST) (No. 2011-0028769, 2013-044975). The authors also thank for the support of the Samsung Semiconductor Research Center at Korea University.

PY - 2014/4/9

Y1 - 2014/4/9

N2 - A reduced graphene oxide (RGO)-based transparent electronic memory cell with multi-level resistive switching (RS) was successfully realized by a dip-coating method. Using ITO/RGO/ITO structures, the memory device exhibited a transmittance above 80% (including the substrate) in the visible region and multi-level RS behavior in the 00, 01, 10, and 11 states by varying the pulse height from 2â €...V to 7â €...V. In the reliability test, the device exhibited a good endurance of over 10 5 cycles and a long data retention of over 10 5 â €...s at 85°C in each state. We believe that the RGO-based transparent memory presented in this work could be a milestone for future transparent electronic devices.

AB - A reduced graphene oxide (RGO)-based transparent electronic memory cell with multi-level resistive switching (RS) was successfully realized by a dip-coating method. Using ITO/RGO/ITO structures, the memory device exhibited a transmittance above 80% (including the substrate) in the visible region and multi-level RS behavior in the 00, 01, 10, and 11 states by varying the pulse height from 2â €...V to 7â €...V. In the reliability test, the device exhibited a good endurance of over 10 5 cycles and a long data retention of over 10 5 â €...s at 85°C in each state. We believe that the RGO-based transparent memory presented in this work could be a milestone for future transparent electronic devices.

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Transparent multi-level resistive switching phenomena observed in ITO/RGO/ITO memory cells by the sol-gel dip-coating method

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