Abstract
A reduced graphene oxide (RGO)-based transparent electronic memory cell with multi-level resistive switching (RS) was successfully realized by a dip-coating method. Using ITO/RGO/ITO structures, the memory device exhibited a transmittance above 80% (including the substrate) in the visible region and multi-level RS behavior in the 00, 01, 10, and 11 states by varying the pulse height from 2â €...V to 7â €...V. In the reliability test, the device exhibited a good endurance of over 10 5 cycles and a long data retention of over 10 5 â €...s at 85°C in each state. We believe that the RGO-based transparent memory presented in this work could be a milestone for future transparent electronic devices.
Original language | English |
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Article number | 4614 |
Journal | Scientific reports |
Volume | 4 |
DOIs | |
Publication status | Published - 2014 Apr 9 |
Bibliographical note
Funding Information:This research was supported by a National Research Foundation of Korea (NRF) grant funded by the Ministry of Education, Science and Technology (MEST) (No. 2011-0028769, 2013-044975). The authors also thank for the support of the Samsung Semiconductor Research Center at Korea University.
ASJC Scopus subject areas
- General