Transparent resistive switching memory using aluminum oxide on a flexible substrate

Seung Won Yeom, Sang Chul Shin, Tan Young Kim, Hyeon Jun Ha, Yun-Hi Lee, Jae Won Shim, Byeong Kwon Ju

Research output: Contribution to journalArticlepeer-review

35 Citations (Scopus)


Resistive switching memory (ReRAM) has attracted much attention in recent times owing to its fast switching, simple structure, and non-volatility. Flexible and transparent electronic devices have also attracted considerable attention. We therefore fabricated an Al2O3-based ReRAM with transparent indium-zinc-oxide (IZO) electrodes on a flexible substrate. The device transmittance was found to be higher than 80% in the visible region (400-800 nm). Bended states (radius = 10 mm) of the device also did not affect the memory performance because of the flexibility of the two transparent IZO electrodes and the thin Al2O3 layer. The conduction mechanism of the resistive switching of our device was explained by ohmic conduction and a Poole-Frenkel emission model. The conduction mechanism was proved by oxygen vacancies in the Al2O3 layer, as analyzed by x-ray photoelectron spectroscopy analysis. These results encourage the application of ReRAM in flexible and transparent electronic devices.

Original languageEnglish
Article number07LT01
Issue number7
Publication statusPublished - 2016 Jan 14


  • oxygen vacancy
  • Poole-Frenkel emission
  • ReRAM
  • resistive switching

ASJC Scopus subject areas

  • Bioengineering
  • General Chemistry
  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Mechanics of Materials
  • General Materials Science


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