Transparent resistive switching memory using ITO/AlN/ITO capacitors

Hee Dong Kim; Ho Myoung An; Yujeong Seo; Tae Geun Kim

doi:10.1109/LED.2011.2158056

Transparent resistive switching memory using ITO/AlN/ITO capacitors

Hee Dong Kim, Ho Myoung An, Yujeong Seo, Tae Geun Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

67 Citations (Scopus)

Abstract

This letter covers the fabrication of a transparent resistive random access memory (T-ReRAM) device using ITO/AlN/ITO capacitors and its observed resistive switching characteristics. This AlN-based T-ReRAM shows a transmittance above 80% (including the substrate) in the visible region and an excellent switching behavior under ±3 V/10 ns with a high-to-low resistance ratio greater than 10². In the reliability test, the device showed an endurance of 10⁸ cycles and a retention time of 10^-5s at 85 °C. We believe that the AlN-based T-ReRAM presented in this letter could be a milestone for future see-through electronic devices.

Original language	English
Article number	5873117
Pages (from-to)	1125-1127
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	32
Issue number	8
DOIs	https://doi.org/10.1109/LED.2011.2158056
Publication status	Published - 2011 Aug

Keywords

AlN
nonvolatile memory (NVM)
transparent resistive random access memory (ReRAM) (T-ReRAM)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2011.2158056

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@article{b052545d141741aca4abac10e5f085f1,

title = "Transparent resistive switching memory using ITO/AlN/ITO capacitors",

abstract = "This letter covers the fabrication of a transparent resistive random access memory (T-ReRAM) device using ITO/AlN/ITO capacitors and its observed resistive switching characteristics. This AlN-based T-ReRAM shows a transmittance above 80% (including the substrate) in the visible region and an excellent switching behavior under ±3 V/10 ns with a high-to-low resistance ratio greater than 102. In the reliability test, the device showed an endurance of 108 cycles and a retention time of 10-5s at 85 °C. We believe that the AlN-based T-ReRAM presented in this letter could be a milestone for future see-through electronic devices.",

keywords = "AlN, nonvolatile memory (NVM), transparent resistive random access memory (ReRAM) (T-ReRAM)",

author = "Kim, {Hee Dong} and An, {Ho Myoung} and Yujeong Seo and Kim, {Tae Geun}",

note = "Funding Information: Manuscript received April 20, 2011; revised May 15, 2011; accepted May 18, 2011. Date of publication June 13, 2011; date of current version July 27, 2011. This work was supported in part by Seoul R&BD Program under Grant R1009391, by Leading Foreign Research Institute Recruitment Program through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology under Grant 2010-00218, and by the Samsung Semiconductor Research Center at Korea University. The review of this letter was arranged by Editor W. S. Wong.",

year = "2011",

month = aug,

doi = "10.1109/LED.2011.2158056",

language = "English",

volume = "32",

pages = "1125--1127",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "8",

}

TY - JOUR

T1 - Transparent resistive switching memory using ITO/AlN/ITO capacitors

AU - Kim, Hee Dong

AU - An, Ho Myoung

AU - Seo, Yujeong

AU - Kim, Tae Geun

N1 - Funding Information: Manuscript received April 20, 2011; revised May 15, 2011; accepted May 18, 2011. Date of publication June 13, 2011; date of current version July 27, 2011. This work was supported in part by Seoul R&BD Program under Grant R1009391, by Leading Foreign Research Institute Recruitment Program through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology under Grant 2010-00218, and by the Samsung Semiconductor Research Center at Korea University. The review of this letter was arranged by Editor W. S. Wong.

PY - 2011/8

Y1 - 2011/8

N2 - This letter covers the fabrication of a transparent resistive random access memory (T-ReRAM) device using ITO/AlN/ITO capacitors and its observed resistive switching characteristics. This AlN-based T-ReRAM shows a transmittance above 80% (including the substrate) in the visible region and an excellent switching behavior under ±3 V/10 ns with a high-to-low resistance ratio greater than 102. In the reliability test, the device showed an endurance of 108 cycles and a retention time of 10-5s at 85 °C. We believe that the AlN-based T-ReRAM presented in this letter could be a milestone for future see-through electronic devices.

AB - This letter covers the fabrication of a transparent resistive random access memory (T-ReRAM) device using ITO/AlN/ITO capacitors and its observed resistive switching characteristics. This AlN-based T-ReRAM shows a transmittance above 80% (including the substrate) in the visible region and an excellent switching behavior under ±3 V/10 ns with a high-to-low resistance ratio greater than 102. In the reliability test, the device showed an endurance of 108 cycles and a retention time of 10-5s at 85 °C. We believe that the AlN-based T-ReRAM presented in this letter could be a milestone for future see-through electronic devices.

KW - AlN

KW - nonvolatile memory (NVM)

KW - transparent resistive random access memory (ReRAM) (T-ReRAM)

UR - http://www.scopus.com/inward/record.url?scp=79960929742&partnerID=8YFLogxK

U2 - 10.1109/LED.2011.2158056

DO - 10.1109/LED.2011.2158056

M3 - Article

AN - SCOPUS:79960929742

SN - 0741-3106

VL - 32

SP - 1125

EP - 1127

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 8

M1 - 5873117

ER -

Transparent resistive switching memory using ITO/AlN/ITO capacitors

Abstract

Keywords

ASJC Scopus subject areas

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