Transport and switching behaviors in magnetic tunnel junctions consisting of CoFeB/FeNiSiB hybrid free layers

D. H. Kim, D. K. Kim, J. U. Cho, S. Y. Park, S. Isogami, M. Tsunoda, M. Takahashi, E. E. Fullerton, Y. K. Kim

    Research output: Contribution to journalArticlepeer-review

    3 Citations (Scopus)

    Abstract

    We report the efficacy of CoFeB/FeNiSiB hybrid ferromagnetic layers as free layers in magnetic tunnel junctions. A junction with a CoFeB (2.25 nm)/FeNiSiB (0.75 nm) free layer exhibited a tunneling magnetoresistance ratio and a resistance-area product value of 130% and 25 Ωμm 2, respectively. The critical current density for spin transfer torque (STT) switching was 2.3 MA/cm 2. This study suggests that the addition of an amorphous FeNiSiB in the free layer enhances the magnetotransport properties.

    Original languageEnglish
    Article number093913
    JournalJournal of Applied Physics
    Volume111
    Issue number9
    DOIs
    Publication statusPublished - 2012 May 1

    Bibliographical note

    Funding Information:
    This work was supported in part by the National Research Foundation of Korea funded by the Ministry of Education, Science, and Technology (2011-0016497).

    ASJC Scopus subject areas

    • General Physics and Astronomy

    Fingerprint

    Dive into the research topics of 'Transport and switching behaviors in magnetic tunnel junctions consisting of CoFeB/FeNiSiB hybrid free layers'. Together they form a unique fingerprint.

    Cite this