Abstract
We report the efficacy of CoFeB/FeNiSiB hybrid ferromagnetic layers as free layers in magnetic tunnel junctions. A junction with a CoFeB (2.25 nm)/FeNiSiB (0.75 nm) free layer exhibited a tunneling magnetoresistance ratio and a resistance-area product value of 130% and 25 Ωμm 2, respectively. The critical current density for spin transfer torque (STT) switching was 2.3 MA/cm 2. This study suggests that the addition of an amorphous FeNiSiB in the free layer enhances the magnetotransport properties.
Original language | English |
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Article number | 093913 |
Journal | Journal of Applied Physics |
Volume | 111 |
Issue number | 9 |
DOIs | |
Publication status | Published - 2012 May 1 |
ASJC Scopus subject areas
- Physics and Astronomy(all)