Transport characterization of chemically-functionalized single-walled carbon nanotube thin film transistor

Jung Ah Lee; Kyeong Kap Paek; Sangyoup Lee; Byeong Kwon Ju; Yun Hi Lee; Hyun Joon Shin

doi:10.1149/1.3610343

Transport characterization of chemically-functionalized single-walled carbon nanotube thin film transistor

Jung Ah Lee, Kyeong Kap Paek, Sangyoup Lee, Byeong Kwon Ju, Yun Hi Lee, Hyun Joon Shin

Research output: Contribution to journal › Article › peer-review

Abstract

The electronic transport properties of the thin film transistor (TFT) devices consisting of carboxyl-modified single-walled carbon nanotube (c-SWCNT) network are studied. This work is focused on the analysis of the effect of chemical treatment on the electronic transport properties from these devices. The c-SWCNT thin film transistor (c-SWCNT TFT) devices were fabricated by a directed assembly method based on electrostatic interaction between amino-functionalized substrate and c-SWCNTs. The electrical characteristics of c-SWCNT TFTs were measured at room temperature. From the Raman results and the transport characteristics of c-SWCNT TFT devices, the transport mechanism in these devices can be accounted that the deep levels arising from vacancy-adatom complex induced the changes in the electronic band structure of SWCNTs.

Original language	English
Pages (from-to)	K175-K182
Journal	Journal of the Electrochemical Society
Volume	158
Issue number	9
DOIs	https://doi.org/10.1149/1.3610343
Publication status	Published - 2011

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1149/1.3610343

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title = "Transport characterization of chemically-functionalized single-walled carbon nanotube thin film transistor",

abstract = "The electronic transport properties of the thin film transistor (TFT) devices consisting of carboxyl-modified single-walled carbon nanotube (c-SWCNT) network are studied. This work is focused on the analysis of the effect of chemical treatment on the electronic transport properties from these devices. The c-SWCNT thin film transistor (c-SWCNT TFT) devices were fabricated by a directed assembly method based on electrostatic interaction between amino-functionalized substrate and c-SWCNTs. The electrical characteristics of c-SWCNT TFTs were measured at room temperature. From the Raman results and the transport characteristics of c-SWCNT TFT devices, the transport mechanism in these devices can be accounted that the deep levels arising from vacancy-adatom complex induced the changes in the electronic band structure of SWCNTs.",

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AU - Lee, Jung Ah

AU - Paek, Kyeong Kap

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AU - Ju, Byeong Kwon

AU - Lee, Yun Hi

AU - Shin, Hyun Joon

PY - 2011

Y1 - 2011

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AB - The electronic transport properties of the thin film transistor (TFT) devices consisting of carboxyl-modified single-walled carbon nanotube (c-SWCNT) network are studied. This work is focused on the analysis of the effect of chemical treatment on the electronic transport properties from these devices. The c-SWCNT thin film transistor (c-SWCNT TFT) devices were fabricated by a directed assembly method based on electrostatic interaction between amino-functionalized substrate and c-SWCNTs. The electrical characteristics of c-SWCNT TFTs were measured at room temperature. From the Raman results and the transport characteristics of c-SWCNT TFT devices, the transport mechanism in these devices can be accounted that the deep levels arising from vacancy-adatom complex induced the changes in the electronic band structure of SWCNTs.

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Transport characterization of chemically-functionalized single-walled carbon nanotube thin film transistor

Abstract

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