Transport characterization of chemically-functionalized single-walled carbon nanotube thin film transistor

Jung Ah Lee, Kyeong Kap Paek, Sangyoup Lee, Byeong Kwon Ju, Yun Hi Lee, Hyun Joon Shin

Research output: Contribution to journalArticlepeer-review


The electronic transport properties of the thin film transistor (TFT) devices consisting of carboxyl-modified single-walled carbon nanotube (c-SWCNT) network are studied. This work is focused on the analysis of the effect of chemical treatment on the electronic transport properties from these devices. The c-SWCNT thin film transistor (c-SWCNT TFT) devices were fabricated by a directed assembly method based on electrostatic interaction between amino-functionalized substrate and c-SWCNTs. The electrical characteristics of c-SWCNT TFTs were measured at room temperature. From the Raman results and the transport characteristics of c-SWCNT TFT devices, the transport mechanism in these devices can be accounted that the deep levels arising from vacancy-adatom complex induced the changes in the electronic band structure of SWCNTs.

Original languageEnglish
Pages (from-to)K175-K182
JournalJournal of the Electrochemical Society
Issue number9
Publication statusPublished - 2011

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry


Dive into the research topics of 'Transport characterization of chemically-functionalized single-walled carbon nanotube thin film transistor'. Together they form a unique fingerprint.

Cite this