Transport of perpendicular spin in a semiconductor channel via a fully electrical method

Joohyung Bae; Kyung Ho Kim; Jung Min Han; Hyun Cheol Koo; Byoung Chul Min; Hyung Jun Kim; Joonyeon Chang; Suk Hee Han; Sang Ho Lim

doi:10.1063/1.4792690

Transport of perpendicular spin in a semiconductor channel via a fully electrical method

Joohyung Bae, Kyung Ho Kim, Jung Min Han, Hyun Cheol Koo, Byoung Chul Min, Hyung Jun Kim, Joonyeon Chang, Suk Hee Han, Sang Ho Lim

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The transport of perpendicular spins in a GaAs channel is investigated via a fully electrical method. A Tb₂₀Fe₆₂Co ₁₈/Co₄₀Fe₄₀B₂₀/MgO contact is used to inject perpendicular spin into the GaAs channel, where the Tb ₂₀Fe₆₂Co₁₈ layer produces perpendicular magnetization and the Co₄₀Fe₄₀B₂₀ layer enhances the spin polarization of the injection current. By measuring the three-terminal Hanle effect with an in-plane field, we obtained a spin signal of 0.65 Ω (0.04 Ω) and a spin lifetime of 0.30 ns (0.17 ns) at 1.8 K (300 K). The observed spin signal with a MgO barrier is more than double of that without a MgO barrier.

Original language	English
Article number	062412
Journal	Applied Physics Letters
Volume	102
Issue number	6
DOIs	https://doi.org/10.1063/1.4792690
Publication status	Published - 2013 Feb 11

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) Grant funded by the Korea government (MEST) (No. 2012-0005631), the IT R&D program of MKE/KEIT (No. 10043398), and the KIST Institutional Program.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Transport of perpendicular spin in a semiconductor channel via a fully electrical method",

abstract = "The transport of perpendicular spins in a GaAs channel is investigated via a fully electrical method. A Tb20Fe62Co 18/Co40Fe40B20/MgO contact is used to inject perpendicular spin into the GaAs channel, where the Tb 20Fe62Co18 layer produces perpendicular magnetization and the Co40Fe40B20 layer enhances the spin polarization of the injection current. By measuring the three-terminal Hanle effect with an in-plane field, we obtained a spin signal of 0.65 Ω (0.04 Ω) and a spin lifetime of 0.30 ns (0.17 ns) at 1.8 K (300 K). The observed spin signal with a MgO barrier is more than double of that without a MgO barrier.",

author = "Joohyung Bae and Kim, {Kyung Ho} and Han, {Jung Min} and {Cheol Koo}, Hyun and Min, {Byoung Chul} and Kim, {Hyung Jun} and Joonyeon Chang and {Hee Han}, Suk and {Ho Lim}, Sang",

note = "Funding Information: This work was supported by the National Research Foundation of Korea (NRF) Grant funded by the Korea government (MEST) (No. 2012-0005631), the IT R&D program of MKE/KEIT (No. 10043398), and the KIST Institutional Program.",

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volume = "102",

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AU - Bae, Joohyung

AU - Kim, Kyung Ho

AU - Han, Jung Min

AU - Cheol Koo, Hyun

AU - Min, Byoung Chul

AU - Kim, Hyung Jun

AU - Chang, Joonyeon

AU - Hee Han, Suk

AU - Ho Lim, Sang

N1 - Funding Information: This work was supported by the National Research Foundation of Korea (NRF) Grant funded by the Korea government (MEST) (No. 2012-0005631), the IT R&D program of MKE/KEIT (No. 10043398), and the KIST Institutional Program.

PY - 2013/2/11

Y1 - 2013/2/11

N2 - The transport of perpendicular spins in a GaAs channel is investigated via a fully electrical method. A Tb20Fe62Co 18/Co40Fe40B20/MgO contact is used to inject perpendicular spin into the GaAs channel, where the Tb 20Fe62Co18 layer produces perpendicular magnetization and the Co40Fe40B20 layer enhances the spin polarization of the injection current. By measuring the three-terminal Hanle effect with an in-plane field, we obtained a spin signal of 0.65 Ω (0.04 Ω) and a spin lifetime of 0.30 ns (0.17 ns) at 1.8 K (300 K). The observed spin signal with a MgO barrier is more than double of that without a MgO barrier.

AB - The transport of perpendicular spins in a GaAs channel is investigated via a fully electrical method. A Tb20Fe62Co 18/Co40Fe40B20/MgO contact is used to inject perpendicular spin into the GaAs channel, where the Tb 20Fe62Co18 layer produces perpendicular magnetization and the Co40Fe40B20 layer enhances the spin polarization of the injection current. By measuring the three-terminal Hanle effect with an in-plane field, we obtained a spin signal of 0.65 Ω (0.04 Ω) and a spin lifetime of 0.30 ns (0.17 ns) at 1.8 K (300 K). The observed spin signal with a MgO barrier is more than double of that without a MgO barrier.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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M1 - 062412

ER -

Transport of perpendicular spin in a semiconductor channel via a fully electrical method

Abstract

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