Transport properties of magnetic tunnel junctions comprising NiFeSiB/CoFeB hybrid free layers

Ji Ung Cho, Do Kyun Kim, Reasmey P. Tan, Shinji Isogami, Masakiyo Tsunoda, Migaku Takahashi, Young Keun Kim

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


We report on the magneto-transport measurements of MgO magnetic tunnel junctions (MTJs) composed of NiFeSiB/CoFeB as the free layer for two different structures (top-type and bottom-type pinning). The magneto-transport properties of these MTJs were investigated by varying the thickness of the amorphous NiFeSiB layer for a fixed CoFeB thickness. The tunnel magnetoresistance (TMR), measured in both type of structures, exhibit the same or a higher amplitude (up to 230% measured at room temperature in the case of top-type device), comparing to the case of a single CoFeB free layer. These results suggest that hybrids free layers can be used as good candidates for MTJs with reduced saturation magnetization while keeping a high TMR ratio.

Original languageEnglish
Article number4957806
Pages (from-to)2364-2366
Number of pages3
JournalIEEE Transactions on Magnetics
Issue number6
Publication statusPublished - 2009 Jun

Bibliographical note

Funding Information:
ACKNOWLEDGMENT This work was supported in part by the Korea Science and Engineering Foundation through the National Research Laboratory Program (No. M10500000105-05J0000-10510), and Tera level Nanodevices Program (No. M103KC010006-06K301-00631). R. P. Tan acknowledges the support of the Brain Korea 21 Program.


  • Amorphous
  • Hybrid free layer
  • Magnetic tunnel junction
  • NiFeSiB

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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