Transport property of insulating barrier in a ferromagnet-semiconductor hybrid system

H. C. Koo, Hyunjung Yi, J. D. Song, Joonyeon Chang, S. H. Han

Research output: Contribution to journalArticlepeer-review


Two-dimensional electron gas layer is essential for a developing spin-FET because of its high mobility and large spin-orbit coupling. The junction properties between a ferromagnet (FM) and a 2-DEG system are the most important factor. Two types of a 2-DEG layer, an InAs and a GaAs channel heterostructures, are fabricated to compare the junction properties of the two systems. A GaAs-based channel 2-DEG layer with Al2O3 tunneling layer using a new oxidization method is prepared. During the heat treatment at the furnace, the arsenic gas was evaporated and the top AlAs layer was converted to the aluminum oxide layer. An InAs channel 2-DEG layer with a semiconductor-based barrier and FM junction shows the ohmic behavior. In the potentiometric measurement, a spin-orbit coupling of 2-DEG layer is observed in the interface between a FM and an InAs channel 2-DEG layer, which proves the efficient spin transport junction.

Original languageEnglish
Pages (from-to)1682-1686
Number of pages5
JournalSolid-State Electronics
Issue number11-12
Publication statusPublished - 2006 Nov
Externally publishedYes

Bibliographical note

Funding Information:
This work was supported by VISION 21 PROGRAM of KIST.


  • 2-DEG
  • Potentiometric measurement
  • Spin-orbit coupling
  • Transmission property

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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