Transport property of insulating barrier in a ferromagnet-semiconductor hybrid system

H. C. Koo; Hyunjung Yi; J. D. Song; Joonyeon Chang; S. H. Han

doi:10.1016/j.sse.2006.09.021

Transport property of insulating barrier in a ferromagnet-semiconductor hybrid system

H. C. Koo, Hyunjung Yi, J. D. Song, Joonyeon Chang, S. H. Han

Research output: Contribution to journal › Article › peer-review

Abstract

Two-dimensional electron gas layer is essential for a developing spin-FET because of its high mobility and large spin-orbit coupling. The junction properties between a ferromagnet (FM) and a 2-DEG system are the most important factor. Two types of a 2-DEG layer, an InAs and a GaAs channel heterostructures, are fabricated to compare the junction properties of the two systems. A GaAs-based channel 2-DEG layer with Al₂O₃ tunneling layer using a new oxidization method is prepared. During the heat treatment at the furnace, the arsenic gas was evaporated and the top AlAs layer was converted to the aluminum oxide layer. An InAs channel 2-DEG layer with a semiconductor-based barrier and FM junction shows the ohmic behavior. In the potentiometric measurement, a spin-orbit coupling of 2-DEG layer is observed in the interface between a FM and an InAs channel 2-DEG layer, which proves the efficient spin transport junction.

Original language	English
Pages (from-to)	1682-1686
Number of pages	5
Journal	Solid-State Electronics
Volume	50
Issue number	11-12
DOIs	https://doi.org/10.1016/j.sse.2006.09.021
Publication status	Published - 2006 Nov

Bibliographical note

Funding Information:
This work was supported by VISION 21 PROGRAM of KIST.

Keywords

2-DEG
Potentiometric measurement
Spin-orbit coupling
Transmission property

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1016/j.sse.2006.09.021

Cite this

@article{15d087617c024d8da87b4f7881740030,

title = "Transport property of insulating barrier in a ferromagnet-semiconductor hybrid system",

abstract = "Two-dimensional electron gas layer is essential for a developing spin-FET because of its high mobility and large spin-orbit coupling. The junction properties between a ferromagnet (FM) and a 2-DEG system are the most important factor. Two types of a 2-DEG layer, an InAs and a GaAs channel heterostructures, are fabricated to compare the junction properties of the two systems. A GaAs-based channel 2-DEG layer with Al2O3 tunneling layer using a new oxidization method is prepared. During the heat treatment at the furnace, the arsenic gas was evaporated and the top AlAs layer was converted to the aluminum oxide layer. An InAs channel 2-DEG layer with a semiconductor-based barrier and FM junction shows the ohmic behavior. In the potentiometric measurement, a spin-orbit coupling of 2-DEG layer is observed in the interface between a FM and an InAs channel 2-DEG layer, which proves the efficient spin transport junction.",

keywords = "2-DEG, Potentiometric measurement, Spin-orbit coupling, Transmission property",

author = "Koo, {H. C.} and Hyunjung Yi and Song, {J. D.} and Joonyeon Chang and Han, {S. H.}",

note = "Funding Information: This work was supported by VISION 21 PROGRAM of KIST.",

year = "2006",

month = nov,

doi = "10.1016/j.sse.2006.09.021",

language = "English",

volume = "50",

pages = "1682--1686",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd",

number = "11-12",

}

TY - JOUR

T1 - Transport property of insulating barrier in a ferromagnet-semiconductor hybrid system

AU - Koo, H. C.

AU - Yi, Hyunjung

AU - Song, J. D.

AU - Chang, Joonyeon

AU - Han, S. H.

N1 - Funding Information: This work was supported by VISION 21 PROGRAM of KIST.

PY - 2006/11

Y1 - 2006/11

N2 - Two-dimensional electron gas layer is essential for a developing spin-FET because of its high mobility and large spin-orbit coupling. The junction properties between a ferromagnet (FM) and a 2-DEG system are the most important factor. Two types of a 2-DEG layer, an InAs and a GaAs channel heterostructures, are fabricated to compare the junction properties of the two systems. A GaAs-based channel 2-DEG layer with Al2O3 tunneling layer using a new oxidization method is prepared. During the heat treatment at the furnace, the arsenic gas was evaporated and the top AlAs layer was converted to the aluminum oxide layer. An InAs channel 2-DEG layer with a semiconductor-based barrier and FM junction shows the ohmic behavior. In the potentiometric measurement, a spin-orbit coupling of 2-DEG layer is observed in the interface between a FM and an InAs channel 2-DEG layer, which proves the efficient spin transport junction.

AB - Two-dimensional electron gas layer is essential for a developing spin-FET because of its high mobility and large spin-orbit coupling. The junction properties between a ferromagnet (FM) and a 2-DEG system are the most important factor. Two types of a 2-DEG layer, an InAs and a GaAs channel heterostructures, are fabricated to compare the junction properties of the two systems. A GaAs-based channel 2-DEG layer with Al2O3 tunneling layer using a new oxidization method is prepared. During the heat treatment at the furnace, the arsenic gas was evaporated and the top AlAs layer was converted to the aluminum oxide layer. An InAs channel 2-DEG layer with a semiconductor-based barrier and FM junction shows the ohmic behavior. In the potentiometric measurement, a spin-orbit coupling of 2-DEG layer is observed in the interface between a FM and an InAs channel 2-DEG layer, which proves the efficient spin transport junction.

KW - 2-DEG

KW - Potentiometric measurement

KW - Spin-orbit coupling

KW - Transmission property

UR - http://www.scopus.com/inward/record.url?scp=33751235309&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2006.09.021

DO - 10.1016/j.sse.2006.09.021

M3 - Article

AN - SCOPUS:33751235309

SN - 0038-1101

VL - 50

SP - 1682

EP - 1686

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 11-12

ER -

Transport property of insulating barrier in a ferromagnet-semiconductor hybrid system

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this