TY - JOUR
T1 - Triangular GaN-BN core-shell nanocables
T2 - Synthesis and field emission
AU - Jang, Woo Sung
AU - Kim, Shin Young
AU - Lee, Jinyoung
AU - Park, Jeunghee
AU - Park, Chan Jun
AU - Lee, Cheol Jin
N1 - Funding Information:
This work is supported by KRF (R14-2003-033-01003-0; R02-2004-000-10025-0; 2003-015-C00265), and KIST (2E18740–05–062). The SEM and field-emission TEM measurements were performed at the Korea Basic Science Institute. Experiments at PLS were supported in part by MOST and POSTECH.
PY - 2006/4/28
Y1 - 2006/4/28
N2 - Triangular GaN-BN core-shell nanocables were synthesized by thermal chemical vapor deposition using GaN/B2O3/NH3 reaction. They consist of single-crystalline wurtzite GaN nanowires (avg. diameter = 60 nm), grown along the [0 1 0] direction, and 3 nm-thick crystalline h-BN outerlayers. The h-BN outerlayers lead to superhydrophobicity, and probably reduce the surface defects of GaN nanowires. Field emission from as-grown GaN-BN nanocables shows large current densities and low turn-on voltages, which are comparable to those of bare GaN nanowires.
AB - Triangular GaN-BN core-shell nanocables were synthesized by thermal chemical vapor deposition using GaN/B2O3/NH3 reaction. They consist of single-crystalline wurtzite GaN nanowires (avg. diameter = 60 nm), grown along the [0 1 0] direction, and 3 nm-thick crystalline h-BN outerlayers. The h-BN outerlayers lead to superhydrophobicity, and probably reduce the surface defects of GaN nanowires. Field emission from as-grown GaN-BN nanocables shows large current densities and low turn-on voltages, which are comparable to those of bare GaN nanowires.
UR - http://www.scopus.com/inward/record.url?scp=33646028784&partnerID=8YFLogxK
U2 - 10.1016/j.cplett.2006.02.021
DO - 10.1016/j.cplett.2006.02.021
M3 - Article
AN - SCOPUS:33646028784
SN - 0009-2614
VL - 422
SP - 41
EP - 45
JO - Chemical Physics Letters
JF - Chemical Physics Letters
IS - 1-3
ER -