Triangular GaN-BN core-shell nanocables: Synthesis and field emission

Woo Sung Jang; Shin Young Kim; Jinyoung Lee; Jeunghee Park; Chan Jun Park; Cheol Jin Lee

doi:10.1016/j.cplett.2006.02.021

Triangular GaN-BN core-shell nanocables: Synthesis and field emission

Woo Sung Jang
, Shin Young Kim
, Jinyoung Lee
, Jeunghee Park^*
, Chan Jun Park
, Cheol Jin Lee

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

33 Citations (Scopus)

Abstract

Triangular GaN-BN core-shell nanocables were synthesized by thermal chemical vapor deposition using GaN/B₂O₃/NH₃ reaction. They consist of single-crystalline wurtzite GaN nanowires (avg. diameter = 60 nm), grown along the [0 1 0] direction, and 3 nm-thick crystalline h-BN outerlayers. The h-BN outerlayers lead to superhydrophobicity, and probably reduce the surface defects of GaN nanowires. Field emission from as-grown GaN-BN nanocables shows large current densities and low turn-on voltages, which are comparable to those of bare GaN nanowires.

Original language	English
Pages (from-to)	41-45
Number of pages	5
Journal	Chemical Physics Letters
Volume	422
Issue number	1-3
DOIs	https://doi.org/10.1016/j.cplett.2006.02.021
Publication status	Published - 2006 Apr 28

Bibliographical note

Funding Information:
This work is supported by KRF (R14-2003-033-01003-0; R02-2004-000-10025-0; 2003-015-C00265), and KIST (2E18740–05–062). The SEM and field-emission TEM measurements were performed at the Korea Basic Science Institute. Experiments at PLS were supported in part by MOST and POSTECH.

ASJC Scopus subject areas

General Physics and Astronomy
Physical and Theoretical Chemistry

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10.1016/j.cplett.2006.02.021

Cite this

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title = "Triangular GaN-BN core-shell nanocables: Synthesis and field emission",

abstract = "Triangular GaN-BN core-shell nanocables were synthesized by thermal chemical vapor deposition using GaN/B2O3/NH3 reaction. They consist of single-crystalline wurtzite GaN nanowires (avg. diameter = 60 nm), grown along the [0 1 0] direction, and 3 nm-thick crystalline h-BN outerlayers. The h-BN outerlayers lead to superhydrophobicity, and probably reduce the surface defects of GaN nanowires. Field emission from as-grown GaN-BN nanocables shows large current densities and low turn-on voltages, which are comparable to those of bare GaN nanowires.",

author = "Jang, \{Woo Sung\} and Kim, \{Shin Young\} and Jinyoung Lee and Jeunghee Park and Park, \{Chan Jun\} and Lee, \{Cheol Jin\}",

note = "Funding Information: This work is supported by KRF (R14-2003-033-01003-0; R02-2004-000-10025-0; 2003-015-C00265), and KIST (2E18740–05–062). The SEM and field-emission TEM measurements were performed at the Korea Basic Science Institute. Experiments at PLS were supported in part by MOST and POSTECH.",

year = "2006",

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day = "28",

doi = "10.1016/j.cplett.2006.02.021",

language = "English",

volume = "422",

pages = "41--45",

journal = "Chemical Physics Letters",

issn = "0009-2614",

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TY - JOUR

T1 - Triangular GaN-BN core-shell nanocables

T2 - Synthesis and field emission

AU - Jang, Woo Sung

AU - Kim, Shin Young

AU - Lee, Jinyoung

AU - Park, Jeunghee

AU - Park, Chan Jun

AU - Lee, Cheol Jin

N1 - Funding Information: This work is supported by KRF (R14-2003-033-01003-0; R02-2004-000-10025-0; 2003-015-C00265), and KIST (2E18740–05–062). The SEM and field-emission TEM measurements were performed at the Korea Basic Science Institute. Experiments at PLS were supported in part by MOST and POSTECH.

PY - 2006/4/28

Y1 - 2006/4/28

N2 - Triangular GaN-BN core-shell nanocables were synthesized by thermal chemical vapor deposition using GaN/B2O3/NH3 reaction. They consist of single-crystalline wurtzite GaN nanowires (avg. diameter = 60 nm), grown along the [0 1 0] direction, and 3 nm-thick crystalline h-BN outerlayers. The h-BN outerlayers lead to superhydrophobicity, and probably reduce the surface defects of GaN nanowires. Field emission from as-grown GaN-BN nanocables shows large current densities and low turn-on voltages, which are comparable to those of bare GaN nanowires.

AB - Triangular GaN-BN core-shell nanocables were synthesized by thermal chemical vapor deposition using GaN/B2O3/NH3 reaction. They consist of single-crystalline wurtzite GaN nanowires (avg. diameter = 60 nm), grown along the [0 1 0] direction, and 3 nm-thick crystalline h-BN outerlayers. The h-BN outerlayers lead to superhydrophobicity, and probably reduce the surface defects of GaN nanowires. Field emission from as-grown GaN-BN nanocables shows large current densities and low turn-on voltages, which are comparable to those of bare GaN nanowires.

UR - https://www.scopus.com/pages/publications/33646028784

U2 - 10.1016/j.cplett.2006.02.021

DO - 10.1016/j.cplett.2006.02.021

M3 - Article

AN - SCOPUS:33646028784

SN - 0009-2614

VL - 422

SP - 41

EP - 45

JO - Chemical Physics Letters

JF - Chemical Physics Letters

IS - 1-3

ER -

Triangular GaN-BN core-shell nanocables: Synthesis and field emission

Abstract

Bibliographical note

ASJC Scopus subject areas

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