Triethanolamine doped multilayer MoS2 field effect transistors

Min Yeul Ryu, Ho Kyun Jang, Kook Jin Lee, Mingxing Piao, Seung Pil Ko, Minju Shin, Junghwan Huh, Gyu Tae Kim

Research output: Contribution to journalArticlepeer-review

35 Citations (Scopus)


Chemical doping has been investigated as an alternative method of conventional ion implantation for two-dimensional materials. We herein report chemically doped multilayer molybdenum disulfide (MoS2) field effect transistors (FETs) through n-type channel doping, wherein triethanolamine (TEOA) is used as an n-type dopant. As a result of the TEOA doping process, the electrical performances of multilayer MoS2 FETs were enhanced at room temperature. Extracted field effect mobility was estimated to be ∼30 cm2 V-1 s-1 after the surface doping process, which is 10 times higher than that of the pristine device. Subthreshold swing and contact resistance were also improved after the TEOA doping process. The enhancement of the subthreshold swing was demonstrated by using an independent FET model. Furthermore, we found that the doping level can be effectively controlled by the heat treatment method. These results demonstrate a promising material system that is easily controlled with high performance, while elucidating the underlying mechanism of improved electrical properties by the doping effect in a multilayered scheme.

Original languageEnglish
Pages (from-to)13133-13139
Number of pages7
JournalPhysical Chemistry Chemical Physics
Issue number20
Publication statusPublished - 2017

Bibliographical note

Funding Information:
This research was supported by the MSIP(Ministry of Science, ICT and Future Planning), Korea, under the ITRC (Information Technology Research Center) support program (IITP-2016-R0992- 16-1017) supervised by the IITP (Institute for Information & communications Technology Promotion).

Publisher Copyright:
© 2017 the Owner Societies.

ASJC Scopus subject areas

  • General Physics and Astronomy
  • Physical and Theoretical Chemistry


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