Abstract
We demonstrated a controllable tuning of the electronic characteristics of ZnO nanowire field effect transistors (FETs) using a high-energy proton beam. After a short proton irradiation time, the threshold voltage shifted to the negative gate bias direction with an increase in the electrical conductance, whereas the threshold voltage shifted to the positive gate bias direction with a decrease in the electrical conductance after a long proton irradiation time. The electrical characteristics of two different types of ZnO nanowires FET device structures in which the ZnO nanowires are placed on the substrate or suspended above the substrate and photoluminescence (PL) studies of the ZnO nanowires provide substantial evidence that the experimental observations result from the irradiation-induced charges in the bulk SiO2 and at the SiO2/ZnO nanowire interface, which can be explained by a surface-band-bending model in terms of gate electric field modulation. Our study on the proton-irradiation-mediated functionalization can be potentially interesting not only for understanding the proton irradiation effects on nanoscale devices, but also for creating the property-tailored nanoscale devices.
Original language | English |
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Pages (from-to) | 811-818 |
Number of pages | 8 |
Journal | ACS nano |
Volume | 4 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2010 Feb 23 |
Externally published | Yes |
Keywords
- Electronic transport
- Field effect transistors
- Proton irradiation
- Semiconductor nanowires
- ZnO nanowires
ASJC Scopus subject areas
- General Materials Science
- General Engineering
- General Physics and Astronomy