Keyphrases
Bending Model
16%
Device Structure
16%
Electric Field Modulation
16%
Electrical Characteristics
16%
Electrical Conductance
33%
Electronic Characteristics
100%
Gate Bias
16%
Gate Electric Field
16%
High Energy Proton Beams
16%
Induced Charge
16%
Irradiation
16%
Irradiation Time
33%
Nanoscale Devices
33%
Negative Gate Bias
16%
NWFET
100%
Photoluminescence Studies
16%
Proton Irradiation
100%
Proton Irradiation Effects
16%
Silica
33%
Substantial Evidence
16%
Surface Band Bending
16%
Threshold Voltage
33%
Transistor Device
16%
ZnO Nanowires
100%
Material Science
Electrical Property
16%
Field Effect Transistor
100%
Nanowire
100%
Photoluminescence
16%
Proton Irradiation
100%
Surface (Surface Science)
16%
ZnO
100%
Engineering
Band Bending
16%
Device Structure
16%
Electric Field
16%
Electrical Conductivity
33%
Experimental Observation
16%
Field-Effect Transistor
100%
Gate Bias
33%
Induced Charge
16%
Nanoscale
33%
Nanowire
100%
Silicon Dioxide
33%
Tailored Property
16%