Tuning the threshold voltage of exfoliated β-Ga                         2                         O                         3                          flake-based field-effect transistors by photo-enhanced H                         3                         PO                         4                          wet etching

Jongha Son; Yongbeom Kwon; Janghyuk Kim; Jihyun Kim

doi:10.1149/2.0211808jss

Tuning the threshold voltage of exfoliated β-Ga ₂ O ₃ flake-based field-effect transistors by photo-enhanced H ₃ PO ₄ wet etching

Jongha Son, Yongbeom Kwon, Janghyuk Kim, Jihyun Kim

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

Monoclinic β-Ga ₂ O ₃ with an ultra-wide energy bandgap of ∼4.9 eV has facile cleavage planes because of the high anisotropy in the lattice structure. An exfoliated nanolayer flake of β-Ga ₂ O ₃ can be used as an active channel layer in nanoelectronics. However, the mechanical exfoliation method used poses a fundamental issue in that the separated individual layer has a random thickness, which makes it challenging to obtain reproducible device performance. In our study, we demonstrated a photo-enhanced chemical etching technique to control the thickness of exfoliated β-Ga ₂ O ₃ nanolayers, enabling us to adjust the threshold voltage of field-effect transistors (FETs) based on these nanolayers. Thickness-dependent device characteristics (threshold voltage, subthreshold swing, on/off ratio, and field-effect mobility) of the back-gated FETs were investigated as a function of the active channel layer (β-Ga ₂ O ₃ ) thickness achieved by the photo-enhanced H ₃ PO ₄ etching. Our study paves the way for the implementation of exfoliated β-Ga ₂ O ₃ nanolayers in nanoelectronics.

Original language	English
Pages (from-to)	Q148-Q151
Journal	ECS Journal of Solid State Science and Technology
Volume	7
Issue number	8
DOIs	https://doi.org/10.1149/2.0211808jss
Publication status	Published - 2018

Bibliographical note

Funding Information:
The research at Korea University was supported by the New & Renewable Energy Core Technology Program of Korea Institute of Energy Technology Evaluation and Planning (KETEP), and financial support was granted from the Ministry of Trade, Industry & Energy, Korea (Nos. 20173010012970 and 20172010104830).

Publisher Copyright:
© 2018 The Electrochemical Society.

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Access to Document

10.1149/2.0211808jss

Cite this

Son, J., Kwon, Y., Kim, J., & Kim, J. (2018). Tuning the threshold voltage of exfoliated β-Ga ₂ O ₃ flake-based field-effect transistors by photo-enhanced H ₃ PO ₄ wet etching ECS Journal of Solid State Science and Technology, 7(8), Q148-Q151. https://doi.org/10.1149/2.0211808jss

Tuning the threshold voltage of exfoliated β-Ga ₂ O ₃ flake-based field-effect transistors by photo-enhanced H ₃ PO ₄ wet etching . / Son, Jongha; Kwon, Yongbeom; Kim, Janghyuk et al.
In: ECS Journal of Solid State Science and Technology, Vol. 7, No. 8, 2018, p. Q148-Q151.

Research output: Contribution to journal › Article › peer-review

Son, J, Kwon, Y, Kim, J & Kim, J 2018, ' Tuning the threshold voltage of exfoliated β-Ga ₂ O ₃ flake-based field-effect transistors by photo-enhanced H ₃ PO ₄ wet etching ', ECS Journal of Solid State Science and Technology, vol. 7, no. 8, pp. Q148-Q151. https://doi.org/10.1149/2.0211808jss

Son J, Kwon Y, Kim J, Kim J. Tuning the threshold voltage of exfoliated β-Ga ₂ O ₃ flake-based field-effect transistors by photo-enhanced H ₃ PO ₄ wet etching ECS Journal of Solid State Science and Technology. 2018;7(8):Q148-Q151. doi: 10.1149/2.0211808jss

Son, Jongha ; Kwon, Yongbeom ; Kim, Janghyuk et al. / Tuning the threshold voltage of exfoliated β-Ga ₂ O ₃ flake-based field-effect transistors by photo-enhanced H ₃ PO ₄ wet etching In: ECS Journal of Solid State Science and Technology. 2018 ; Vol. 7, No. 8. pp. Q148-Q151.

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abstract = " Monoclinic β-Ga 2 O 3 with an ultra-wide energy bandgap of ∼4.9 eV has facile cleavage planes because of the high anisotropy in the lattice structure. An exfoliated nanolayer flake of β-Ga 2 O 3 can be used as an active channel layer in nanoelectronics. However, the mechanical exfoliation method used poses a fundamental issue in that the separated individual layer has a random thickness, which makes it challenging to obtain reproducible device performance. In our study, we demonstrated a photo-enhanced chemical etching technique to control the thickness of exfoliated β-Ga 2 O 3 nanolayers, enabling us to adjust the threshold voltage of field-effect transistors (FETs) based on these nanolayers. Thickness-dependent device characteristics (threshold voltage, subthreshold swing, on/off ratio, and field-effect mobility) of the back-gated FETs were investigated as a function of the active channel layer (β-Ga 2 O 3 ) thickness achieved by the photo-enhanced H 3 PO 4 etching. Our study paves the way for the implementation of exfoliated β-Ga 2 O 3 nanolayers in nanoelectronics. ",

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