Tunneling magnetoresistance and magnetization switching of CoFeSiB free layered magnetic tunnel junctions

J. Y. Hwang; S. S. Kim; M. Y. Kim; J. R. Rhee; B. S. Chun; Y. K. Kim; T. W. Kim; S. S. Lee; D. G. Hwang

doi:10.1016/j.jmmm.2006.01.063

Tunneling magnetoresistance and magnetization switching of CoFeSiB free layered magnetic tunnel junctions

J. Y. Hwang, S. S. Kim, M. Y. Kim, J. R. Rhee, B. S. Chun, Y. K. Kim, T. W. Kim, S. S. Lee, D. G. Hwang

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

To reduce magnetization switching field (H_sw) of submicrometer-sized magnetic tunnel junctions (MTJs), amorphous ferromagnetic Co_70.5Fe_4.5Si₁₅B₁₀ free layered MTJs were studied and compared to Co₇₅Fe₂₅ and Ni₈₀Fe₂₀ free layered MTJs. As a CoFeSiB film has a low saturation magnetization ( M_s = 560 emu / cm³) and a high anisotropy constant ( K_u = 2800 erg / cm³), although CoFeSiB free layered MTJs had a slightly lower tunneling magnetoresistance (TMR) ratio than that of CoFe free layered MTJ, the MTJs exhibited much lower H_sw than that of CoFe free layered MTJ, and higher sensitivity than that of CoFe and NiFe free layered MTJs. Results of micromagnetic simulation on magnetization switching processes confirmed that the magnetization in CoFeSiB free layered MTJ switched almost uniformly. Moreover, the surface roughness became more uniform and breakdown voltage increased by inserting CoFeSiB into free layer. The CoFeSiB free layered MTJ structures were found to be beneficial for the switching characteristics such as reducing H_sw and increasing the sensitivity in micrometer-sized elements.

Original language	English
Pages (from-to)	e231-e233
Journal	Journal of Magnetism and Magnetic Materials
Volume	303
Issue number	2 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.jmmm.2006.01.063
Publication status	Published - 2006 Aug

Bibliographical note

Funding Information:
This research was supported by the Korea Research Foundation Grant (No. KRF-2005-015-C00157) funded by the Korean Government (MOEHRD), the Korea Ministry of Science and Technology under contract National Research Laboratory Program, and the National Program for Tera-level Nanodevices as a 21st Century Frontier Program.

Keywords

CoFeSiB
Magnetic tunnel junction
Magnetization switching
Switching field
Tunneling magnetoresistance

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1016/j.jmmm.2006.01.063

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title = "Tunneling magnetoresistance and magnetization switching of CoFeSiB free layered magnetic tunnel junctions",

abstract = "To reduce magnetization switching field (Hsw) of submicrometer-sized magnetic tunnel junctions (MTJs), amorphous ferromagnetic Co70.5Fe4.5Si15B10 free layered MTJs were studied and compared to Co75Fe25 and Ni80Fe20 free layered MTJs. As a CoFeSiB film has a low saturation magnetization ( Ms = 560 emu / cm3) and a high anisotropy constant ( Ku = 2800 erg / cm3), although CoFeSiB free layered MTJs had a slightly lower tunneling magnetoresistance (TMR) ratio than that of CoFe free layered MTJ, the MTJs exhibited much lower Hsw than that of CoFe free layered MTJ, and higher sensitivity than that of CoFe and NiFe free layered MTJs. Results of micromagnetic simulation on magnetization switching processes confirmed that the magnetization in CoFeSiB free layered MTJ switched almost uniformly. Moreover, the surface roughness became more uniform and breakdown voltage increased by inserting CoFeSiB into free layer. The CoFeSiB free layered MTJ structures were found to be beneficial for the switching characteristics such as reducing Hsw and increasing the sensitivity in micrometer-sized elements.",

keywords = "CoFeSiB, Magnetic tunnel junction, Magnetization switching, Switching field, Tunneling magnetoresistance",

author = "Hwang, {J. Y.} and Kim, {S. S.} and Kim, {M. Y.} and Rhee, {J. R.} and Chun, {B. S.} and Kim, {Y. K.} and Kim, {T. W.} and Lee, {S. S.} and Hwang, {D. G.}",

note = "Funding Information: This research was supported by the Korea Research Foundation Grant (No. KRF-2005-015-C00157) funded by the Korean Government (MOEHRD), the Korea Ministry of Science and Technology under contract National Research Laboratory Program, and the National Program for Tera-level Nanodevices as a 21st Century Frontier Program.",

year = "2006",

month = aug,

doi = "10.1016/j.jmmm.2006.01.063",

language = "English",

volume = "303",

pages = "e231--e233",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

publisher = "Elsevier",

number = "2 SPEC. ISS.",

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T1 - Tunneling magnetoresistance and magnetization switching of CoFeSiB free layered magnetic tunnel junctions

AU - Hwang, J. Y.

AU - Kim, S. S.

AU - Kim, M. Y.

AU - Rhee, J. R.

AU - Chun, B. S.

AU - Kim, Y. K.

AU - Kim, T. W.

AU - Lee, S. S.

AU - Hwang, D. G.

N1 - Funding Information: This research was supported by the Korea Research Foundation Grant (No. KRF-2005-015-C00157) funded by the Korean Government (MOEHRD), the Korea Ministry of Science and Technology under contract National Research Laboratory Program, and the National Program for Tera-level Nanodevices as a 21st Century Frontier Program.

PY - 2006/8

Y1 - 2006/8

N2 - To reduce magnetization switching field (Hsw) of submicrometer-sized magnetic tunnel junctions (MTJs), amorphous ferromagnetic Co70.5Fe4.5Si15B10 free layered MTJs were studied and compared to Co75Fe25 and Ni80Fe20 free layered MTJs. As a CoFeSiB film has a low saturation magnetization ( Ms = 560 emu / cm3) and a high anisotropy constant ( Ku = 2800 erg / cm3), although CoFeSiB free layered MTJs had a slightly lower tunneling magnetoresistance (TMR) ratio than that of CoFe free layered MTJ, the MTJs exhibited much lower Hsw than that of CoFe free layered MTJ, and higher sensitivity than that of CoFe and NiFe free layered MTJs. Results of micromagnetic simulation on magnetization switching processes confirmed that the magnetization in CoFeSiB free layered MTJ switched almost uniformly. Moreover, the surface roughness became more uniform and breakdown voltage increased by inserting CoFeSiB into free layer. The CoFeSiB free layered MTJ structures were found to be beneficial for the switching characteristics such as reducing Hsw and increasing the sensitivity in micrometer-sized elements.

AB - To reduce magnetization switching field (Hsw) of submicrometer-sized magnetic tunnel junctions (MTJs), amorphous ferromagnetic Co70.5Fe4.5Si15B10 free layered MTJs were studied and compared to Co75Fe25 and Ni80Fe20 free layered MTJs. As a CoFeSiB film has a low saturation magnetization ( Ms = 560 emu / cm3) and a high anisotropy constant ( Ku = 2800 erg / cm3), although CoFeSiB free layered MTJs had a slightly lower tunneling magnetoresistance (TMR) ratio than that of CoFe free layered MTJ, the MTJs exhibited much lower Hsw than that of CoFe free layered MTJ, and higher sensitivity than that of CoFe and NiFe free layered MTJs. Results of micromagnetic simulation on magnetization switching processes confirmed that the magnetization in CoFeSiB free layered MTJ switched almost uniformly. Moreover, the surface roughness became more uniform and breakdown voltage increased by inserting CoFeSiB into free layer. The CoFeSiB free layered MTJ structures were found to be beneficial for the switching characteristics such as reducing Hsw and increasing the sensitivity in micrometer-sized elements.

KW - CoFeSiB

KW - Magnetic tunnel junction

KW - Magnetization switching

KW - Switching field

KW - Tunneling magnetoresistance

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VL - 303

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JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - 2 SPEC. ISS.

ER -

Tunneling magnetoresistance and magnetization switching of CoFeSiB free layered magnetic tunnel junctions

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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