Two 320 GHz signal sources, a push-push oscillator and an integrated oscillator-doubler, based on a 130 nm SiGe HBT technology are reported. Both signal sources adopt a common-base cross-coupled topology as an oscillator core. The doubler employs a Gm-boosting technique for improved conversion loss. The push-push oscillator exhibits an output power of -6.3 dBm and a phase noise of -96.6 dBc/Hz at 10 MHz offset. The output power and the phase noise of the integrated oscillator-doubler are 1.6 dBm and -94.7 dBc/Hz at 10 MHz offset, respectively. They dissipate dc power of 101.2 mW and 197.4 mW, leading to DC-to-RF efficiency of 0.2 % and 0.7 %, respectively.
Bibliographical notePublisher Copyright:
© 2015 IEEE.
- Heterojunction bipolar transistors (HBTs)
- multiplying circuits
- signal generators
- silicon germanium
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering