Two 320 GHz signal sources based on SiGe HBT technology

Jongwon Yun; Daekeun Yoon; Seungyoon Jung; Mehmet Kaynak; Bernd Tillack; Jae Sung Rieh

doi:10.1109/LMWC.2015.2391011

Two 320 GHz signal sources based on SiGe HBT technology

Jongwon Yun, Daekeun Yoon, Seungyoon Jung, Mehmet Kaynak, Bernd Tillack, Jae Sung Rieh

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

Two 320 GHz signal sources, a push-push oscillator and an integrated oscillator-doubler, based on a 130 nm SiGe HBT technology are reported. Both signal sources adopt a common-base cross-coupled topology as an oscillator core. The doubler employs a G_m-boosting technique for improved conversion loss. The push-push oscillator exhibits an output power of -6.3 dBm and a phase noise of -96.6 dBc/Hz at 10 MHz offset. The output power and the phase noise of the integrated oscillator-doubler are 1.6 dBm and -94.7 dBc/Hz at 10 MHz offset, respectively. They dissipate dc power of 101.2 mW and 197.4 mW, leading to DC-to-RF efficiency of 0.2 % and 0.7 %, respectively.

Original language	English
Article number	7027248
Pages (from-to)	178-180
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	25
Issue number	3
DOIs	https://doi.org/10.1109/LMWC.2015.2391011
Publication status	Published - 2015 Mar 1

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

Keywords

Heterojunction bipolar transistors (HBTs)
multiplying circuits
oscillators
signal generators
silicon germanium

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1109/LMWC.2015.2391011

Cite this

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abstract = "Two 320 GHz signal sources, a push-push oscillator and an integrated oscillator-doubler, based on a 130 nm SiGe HBT technology are reported. Both signal sources adopt a common-base cross-coupled topology as an oscillator core. The doubler employs a Gm-boosting technique for improved conversion loss. The push-push oscillator exhibits an output power of -6.3 dBm and a phase noise of -96.6 dBc/Hz at 10 MHz offset. The output power and the phase noise of the integrated oscillator-doubler are 1.6 dBm and -94.7 dBc/Hz at 10 MHz offset, respectively. They dissipate dc power of 101.2 mW and 197.4 mW, leading to DC-to-RF efficiency of 0.2 % and 0.7 %, respectively.",

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AU - Jung, Seungyoon

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AU - Tillack, Bernd

AU - Rieh, Jae Sung

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Two 320 GHz signal sources based on SiGe HBT technology

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

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