Two-dimensional hole gas formation at the κ-Ga2O3 /AlN heterojunction interface

A. Y. Polyakov; V. I. Nikolaev; A. I. Pechnikov; E. B. Yakimov; S. Yu Karpov; S. I. Stepanov; I. V. Shchemerov; A. A. Vasilev; A. V. Chernykh; A. Kuznetsov; In Hwan Lee; S. J. Pearton

doi:10.1016/j.jallcom.2022.168315

Two-dimensional hole gas formation at the κ-Ga₂O₃ /AlN heterojunction interface

A. Y. Polyakov, V. I. Nikolaev, A. I. Pechnikov, E. B. Yakimov, S. Yu Karpov, S. I. Stepanov, I. V. Shchemerov, A. A. Vasilev, A. V. Chernykh, A. Kuznetsov, In Hwan Lee, S. J. Pearton

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Typically, semiconducting oxides and nitrides exhibit strong conductivity type asymmetries. In this work, we observed and interpreted the emergence of p-type conductivity at the κ-Ga₂O₃/AlN interface. Films of lightly Sn-doped -Ga₂O₃ were deposited by Halide Vapor Phase Epitaxy (HVPE) on AlN/Si templates. Capacitance-voltage (C-V), current-voltage (I-V) measurements on Ni Schottky diodes and Ti/Au Ohmic contacts deposited on the layer surface unexpectedly showed p-type-like behavior, while Electron Beam Induced Current (EBIC) images collected with different beam energies suggest that the EBIC collection occurs near the Ga₂O₃/AlN interface, which also implies the formation of a p-type layer at this interface. We modelled this effect, taking into account the difference in spontaneous electrical polarization of κ-Ga₂O₃ and AlN and this indicated a layer of two-dimensional holes can form at this interface. The possibility to detect this layer depends on the balance between the doping level and the thickness of the κ-Ga₂O₃.

Original language	English
Article number	168315
Journal	Journal of Alloys and Compounds
Volume	936
DOIs	https://doi.org/10.1016/j.jallcom.2022.168315
Publication status	Published - 2023 Mar 5

Bibliographical note

Funding Information:
The work at NUST MISiS was supported in part by the grant from the Ministry of Science and Higher Education of Russian Federation (Agreement # 075-15-2022-1113 ). The international collaboration was enabled by the INTPART program at the Research Council of Norway via project No. 322382. The work at UF was performed as part of Interaction of Ionizing Radiation with Matter University Research Alliance (IIRM-URA), sponsored by Defense Threat Reduction Agency under award HDTRA1-20-2-0002 . The work at UF was also supported by NSF DMR 1856662 .

Publisher Copyright:
© 2022 Elsevier B.V.

Keywords

AlN
GaO
Hole gas
Polytype

ASJC Scopus subject areas

Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.jallcom.2022.168315

Cite this

Polyakov, A. Y., Nikolaev, V. I., Pechnikov, A. I., Yakimov, E. B., Karpov, S. Y., Stepanov, S. I., Shchemerov, I. V., Vasilev, A. A., Chernykh, A. V., Kuznetsov, A., Lee, I. H., & Pearton, S. J. (2023). Two-dimensional hole gas formation at the κ-Ga₂O₃ /AlN heterojunction interface. Journal of Alloys and Compounds, 936, Article 168315. https://doi.org/10.1016/j.jallcom.2022.168315

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title = "Two-dimensional hole gas formation at the κ-Ga2O3 /AlN heterojunction interface",

abstract = "Typically, semiconducting oxides and nitrides exhibit strong conductivity type asymmetries. In this work, we observed and interpreted the emergence of p-type conductivity at the κ-Ga2O3/AlN interface. Films of lightly Sn-doped -Ga2O3 were deposited by Halide Vapor Phase Epitaxy (HVPE) on AlN/Si templates. Capacitance-voltage (C-V), current-voltage (I-V) measurements on Ni Schottky diodes and Ti/Au Ohmic contacts deposited on the layer surface unexpectedly showed p-type-like behavior, while Electron Beam Induced Current (EBIC) images collected with different beam energies suggest that the EBIC collection occurs near the Ga2O3/AlN interface, which also implies the formation of a p-type layer at this interface. We modelled this effect, taking into account the difference in spontaneous electrical polarization of κ-Ga2O3 and AlN and this indicated a layer of two-dimensional holes can form at this interface. The possibility to detect this layer depends on the balance between the doping level and the thickness of the κ-Ga2O3.",

keywords = "AlN, GaO, Hole gas, Polytype",

author = "Polyakov, {A. Y.} and Nikolaev, {V. I.} and Pechnikov, {A. I.} and Yakimov, {E. B.} and Karpov, {S. Yu} and Stepanov, {S. I.} and Shchemerov, {I. V.} and Vasilev, {A. A.} and Chernykh, {A. V.} and A. Kuznetsov and Lee, {In Hwan} and Pearton, {S. J.}",

note = "Funding Information: The work at NUST MISiS was supported in part by the grant from the Ministry of Science and Higher Education of Russian Federation (Agreement # 075-15-2022-1113 ). The international collaboration was enabled by the INTPART program at the Research Council of Norway via project No. 322382. The work at UF was performed as part of Interaction of Ionizing Radiation with Matter University Research Alliance (IIRM-URA), sponsored by Defense Threat Reduction Agency under award HDTRA1-20-2-0002 . The work at UF was also supported by NSF DMR 1856662 . Publisher Copyright: {\textcopyright} 2022 Elsevier B.V.",

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AU - Polyakov, A. Y.

AU - Nikolaev, V. I.

AU - Pechnikov, A. I.

AU - Yakimov, E. B.

AU - Karpov, S. Yu

AU - Stepanov, S. I.

AU - Shchemerov, I. V.

AU - Vasilev, A. A.

AU - Chernykh, A. V.

AU - Kuznetsov, A.

AU - Lee, In Hwan

AU - Pearton, S. J.

N1 - Funding Information: The work at NUST MISiS was supported in part by the grant from the Ministry of Science and Higher Education of Russian Federation (Agreement # 075-15-2022-1113 ). The international collaboration was enabled by the INTPART program at the Research Council of Norway via project No. 322382. The work at UF was performed as part of Interaction of Ionizing Radiation with Matter University Research Alliance (IIRM-URA), sponsored by Defense Threat Reduction Agency under award HDTRA1-20-2-0002 . The work at UF was also supported by NSF DMR 1856662 . Publisher Copyright: © 2022 Elsevier B.V.

PY - 2023/3/5

Y1 - 2023/3/5

N2 - Typically, semiconducting oxides and nitrides exhibit strong conductivity type asymmetries. In this work, we observed and interpreted the emergence of p-type conductivity at the κ-Ga2O3/AlN interface. Films of lightly Sn-doped -Ga2O3 were deposited by Halide Vapor Phase Epitaxy (HVPE) on AlN/Si templates. Capacitance-voltage (C-V), current-voltage (I-V) measurements on Ni Schottky diodes and Ti/Au Ohmic contacts deposited on the layer surface unexpectedly showed p-type-like behavior, while Electron Beam Induced Current (EBIC) images collected with different beam energies suggest that the EBIC collection occurs near the Ga2O3/AlN interface, which also implies the formation of a p-type layer at this interface. We modelled this effect, taking into account the difference in spontaneous electrical polarization of κ-Ga2O3 and AlN and this indicated a layer of two-dimensional holes can form at this interface. The possibility to detect this layer depends on the balance between the doping level and the thickness of the κ-Ga2O3.

AB - Typically, semiconducting oxides and nitrides exhibit strong conductivity type asymmetries. In this work, we observed and interpreted the emergence of p-type conductivity at the κ-Ga2O3/AlN interface. Films of lightly Sn-doped -Ga2O3 were deposited by Halide Vapor Phase Epitaxy (HVPE) on AlN/Si templates. Capacitance-voltage (C-V), current-voltage (I-V) measurements on Ni Schottky diodes and Ti/Au Ohmic contacts deposited on the layer surface unexpectedly showed p-type-like behavior, while Electron Beam Induced Current (EBIC) images collected with different beam energies suggest that the EBIC collection occurs near the Ga2O3/AlN interface, which also implies the formation of a p-type layer at this interface. We modelled this effect, taking into account the difference in spontaneous electrical polarization of κ-Ga2O3 and AlN and this indicated a layer of two-dimensional holes can form at this interface. The possibility to detect this layer depends on the balance between the doping level and the thickness of the κ-Ga2O3.

KW - AlN

KW - GaO

KW - Hole gas

KW - Polytype

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