Two-Dimensionally Layered p-Black Phosphorus/n-MoS2/p-Black Phosphorus Heterojunctions

Geonyeop Lee, Stephen J. Pearton, Fan Ren, Jihyun Kim

Research output: Contribution to journalArticlepeer-review

44 Citations (Scopus)

Abstract

Layered heterojunctions are widely applied as fundamental building blocks for semiconductor devices. For the construction of nanoelectronic and nanophotonic devices, the implementation of two-dimensional materials (2DMs) is essential. However, studies of junction devices composed of 2DMs are still largely focused on single p-n junction devices. In this study, we demonstrate a novel pnp double heterojunction fabricated by the vertical stacking of 2DMs (black phosphorus (BP) and MoS2) using dry-transfer techniques and the formation of high-quality p-n heterojunctions between the BP and MoS2 in the vertically stacked BP/MoS2/BP structure. The pnp double heterojunctions allowed us to modulate the output currents by controlling the input current. These results can be applied for the fabrication of advanced heterojunction devices composed of 2DMs for nano(opto)electronics.

Original languageEnglish
Pages (from-to)10347-10352
Number of pages6
JournalACS Applied Materials and Interfaces
Volume10
Issue number12
DOIs
Publication statusPublished - 2018 Mar 28

Bibliographical note

Funding Information:
This research was supported by the Korea Institute of Energy Technology Evaluation and Planning (KETEP), the Ministry of Trade, Industry, and Energy (MOTIE) of Korea (No. 20172010104830), and the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2015R1D1A1A09057970). The work at UF was partially supported by DTRA1-17-011.

Publisher Copyright:
© 2018 American Chemical Society.

ASJC Scopus subject areas

  • General Materials Science

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