Two-in-One Device with Versatile Compatible Electrical Switching or Data Storage Functions Controlled by the Ferroelectricity of P(VDF-TrFE) via Photocrosslinking

Sunbin Hwang, Sukjae Jang, Minji Kang, Sukang Bae, Seoung Ki Lee, Jae Min Hong, Sang Hyun Lee, Gunuk Wang, Simone Fabiano, Magnus Berggren, Tae Wook Kim

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


Organic electronics demand new platforms that can make integrated circuits and undergo mass production while maintaining diverse functions with high performance. The field-effect transistor has great potential to be a multifunctional device capable of sensing, data processing, data storage, and display. Currently, transistor-based devices cannot be considered intrinsic multifunctional devices because all installed functions are mutually coupled. Such incompatibilities are a crucial barrier to developing an all-in-one multifunctional device capable of driving each function individually. In this study, we focus on the decoupling of electric switching and data storage functions in an organic ferroelectric memory transistor. To overcome the incompatibility of each function, the high permittivity needed for electrical switching and the ferroelectricity needed for data storage become compatible by restricting the motion of poly(vinylidene fluoride-trifluoroethylene) via photocrosslinking with bis-perfluorobenzoazide. The two-in-one device consisting of a photocrosslinked ferroelectric layer exhibits reversible and individual dual-functional operation as a typical transistor with nonvolatile memory. Moreover, a p-MOS depletion load inverter composed of the two transistors with different threshold voltages is also demonstrated by simply changing only one of the threshold voltages by polarization switching. We believe that the two-in-one device will be considered a potential component of integrated organic logic circuits, including memory, in the future.

Original languageEnglish
Pages (from-to)25358-25368
Number of pages11
JournalACS Applied Materials and Interfaces
Issue number28
Publication statusPublished - 2019 Jun 20

Bibliographical note

Funding Information:
This work was supported by the Korea Institute of Science and Technology (KIST) Young Fellow Program, and also partially supported by the National Research Foundation of Korea (NRF-2016R1C1B2007330) and the Ministry of Trade, Industry, and Energy (MOTIE, Korea) under the Industrial Technology Innovation Program “Development of 3D-Deformable Multilayered FPCB Devices” (Grant no. 10051162).

Publisher Copyright:
© 2019 American Chemical Society.


  • bis-FB-N
  • inverter
  • organic ferroelectric memory
  • organic field-effect transistor
  • switchable functions

ASJC Scopus subject areas

  • Materials Science(all)


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