Two inch large area patterning on a vertical light-emitting diode by nano-imprinting technology

Kyeong Jae Byeon; Eun Ju Hong; Hyoungwon Park; Kyung Min Yoon; Hyun Don Song; Jin Wook Lee; Sun Kyung Kim; Hyun Kyong Cho; Ho Ki Kwon; Heon Lee

doi:10.1088/0268-1242/25/3/035008

Two inch large area patterning on a vertical light-emitting diode by nano-imprinting technology

Kyeong Jae Byeon, Eun Ju Hong, Hyoungwon Park, Kyung Min Yoon, Hyun Don Song, Jin Wook Lee, Sun Kyung Kim, Hyun Kyong Cho, Ho Ki Kwon, Heon Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

A vertical light-emitting diode (LED) with a chip size of 500 × 500 νm² was fabricated by the laser lift-off (LLO) process of an InGaN-based blue LED wafer. After the LLO process, photonic crystal patterns by UV nano-imprint lithography were formed on the n-GaN top layer of the vertical LED over the entire area with a diameter of 2 inches. As the result of n-GaN patterning, light output power of the vertical LED with photonic crystals was increased by up to 44% compared to that of the vertical LED without a photonic crystal at a driving current of 1000 mA.

Original language	English
Article number	035008
Journal	Semiconductor Science and Technology
Volume	25
Issue number	3
DOIs	https://doi.org/10.1088/0268-1242/25/3/035008
Publication status	Published - 2010

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/25/3/035008

Cite this

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title = "Two inch large area patterning on a vertical light-emitting diode by nano-imprinting technology",

abstract = "A vertical light-emitting diode (LED) with a chip size of 500 × 500 νm2 was fabricated by the laser lift-off (LLO) process of an InGaN-based blue LED wafer. After the LLO process, photonic crystal patterns by UV nano-imprint lithography were formed on the n-GaN top layer of the vertical LED over the entire area with a diameter of 2 inches. As the result of n-GaN patterning, light output power of the vertical LED with photonic crystals was increased by up to 44% compared to that of the vertical LED without a photonic crystal at a driving current of 1000 mA.",

author = "Byeon, {Kyeong Jae} and Hong, {Eun Ju} and Hyoungwon Park and Yoon, {Kyung Min} and Song, {Hyun Don} and Lee, {Jin Wook} and Kim, {Sun Kyung} and Cho, {Hyun Kyong} and Kwon, {Ho Ki} and Heon Lee",

year = "2010",

doi = "10.1088/0268-1242/25/3/035008",

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T1 - Two inch large area patterning on a vertical light-emitting diode by nano-imprinting technology

AU - Byeon, Kyeong Jae

AU - Hong, Eun Ju

AU - Park, Hyoungwon

AU - Yoon, Kyung Min

AU - Song, Hyun Don

AU - Lee, Jin Wook

AU - Kim, Sun Kyung

AU - Cho, Hyun Kyong

AU - Kwon, Ho Ki

AU - Lee, Heon

PY - 2010

Y1 - 2010

N2 - A vertical light-emitting diode (LED) with a chip size of 500 × 500 νm2 was fabricated by the laser lift-off (LLO) process of an InGaN-based blue LED wafer. After the LLO process, photonic crystal patterns by UV nano-imprint lithography were formed on the n-GaN top layer of the vertical LED over the entire area with a diameter of 2 inches. As the result of n-GaN patterning, light output power of the vertical LED with photonic crystals was increased by up to 44% compared to that of the vertical LED without a photonic crystal at a driving current of 1000 mA.

AB - A vertical light-emitting diode (LED) with a chip size of 500 × 500 νm2 was fabricated by the laser lift-off (LLO) process of an InGaN-based blue LED wafer. After the LLO process, photonic crystal patterns by UV nano-imprint lithography were formed on the n-GaN top layer of the vertical LED over the entire area with a diameter of 2 inches. As the result of n-GaN patterning, light output power of the vertical LED with photonic crystals was increased by up to 44% compared to that of the vertical LED without a photonic crystal at a driving current of 1000 mA.

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U2 - 10.1088/0268-1242/25/3/035008

DO - 10.1088/0268-1242/25/3/035008

M3 - Article

AN - SCOPUS:76649132051

SN - 0268-1242

VL - 25

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 3

M1 - 035008

ER -

Two inch large area patterning on a vertical light-emitting diode by nano-imprinting technology

Abstract

ASJC Scopus subject areas

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