A vertical light-emitting diode (LED) with a chip size of 500 × 500 νm2 was fabricated by the laser lift-off (LLO) process of an InGaN-based blue LED wafer. After the LLO process, photonic crystal patterns by UV nano-imprint lithography were formed on the n-GaN top layer of the vertical LED over the entire area with a diameter of 2 inches. As the result of n-GaN patterning, light output power of the vertical LED with photonic crystals was increased by up to 44% compared to that of the vertical LED without a photonic crystal at a driving current of 1000 mA.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry