Type conversion of intentionally undoped ZnO layers grown by pulsed laser deposition

Min Suk Oh, Sang Ho Kim, Seong Ju Park, Tae Yeon Seong

Research output: Contribution to journalConference articlepeer-review

9 Citations (Scopus)


We have investigated intentionally undoped p-type ZnO films grown on Si(111) substrates by pulsed-laser deposition as a function of the oxygen pressure. It is shown that the undoped ZnO films experience type conversion from n-type to p-type when the oxygen pressure changes from 7.98×10 -3 to 3.99×10-2 Pa. Ti/Au contacts give ohmic behaviour to n-type ZnO (∼1017 cm-3), but leaky Schottky behaviour to p-type ZnO (∼1018 cm-3). It is argued based on PL results that native defects, such as oxygen and zinc vacancies, could play an important role in determining the conductivity of these nominally undoped ZnO films.

Original languageEnglish
Pages (from-to)130-137
Number of pages8
JournalSuperlattices and Microstructures
Issue number1-4
Publication statusPublished - 2006 Jan
Externally publishedYes
EventE-MRS 2005 Symposium G: ZnO and Related Materials Part 2 -
Duration: 2005 May 312005 Jun 3

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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