Type conversion of n-type silicon nanowires to p-type by diffusion of gold ions

Jamin Koo; Myeongwon Lee; Jeongmin Kang; Changjoon Yoon; Kwangeun Kim; Youngin Jeon; Sangsig Kim

doi:10.1088/0268-1242/25/4/045010

Type conversion of n-type silicon nanowires to p-type by diffusion of gold ions

Jamin Koo, Myeongwon Lee, Jeongmin Kang, Changjoon Yoon, Kwangeun Kim, Youngin Jeon, Sangsig Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

The simple type conversion of n-type silicon nanowires (SiNWs) to p-type by the diffusion of Au ions is demonstrated in this study. An Au thin film with a thickness of 10 nm was thermally deposited on an n-type SiNW and a rapid thermal annealing process was performed subsequently to diffuse the Au ions into the SiNW. The electrical characteristics of a back-gate field-effect transistor with a channel composed of the Au-diffused SiNW show that the Au-diffused SiNW acts as a p-type one. The type conversion phenomenon of the SiNW caused by the diffusion of Au ions is discussed in detail in this paper.

Original language	English
Article number	045010
Journal	Semiconductor Science and Technology
Volume	25
Issue number	4
DOIs	https://doi.org/10.1088/0268-1242/25/4/045010
Publication status	Published - 2010

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/25/4/045010

Cite this

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abstract = "The simple type conversion of n-type silicon nanowires (SiNWs) to p-type by the diffusion of Au ions is demonstrated in this study. An Au thin film with a thickness of 10 nm was thermally deposited on an n-type SiNW and a rapid thermal annealing process was performed subsequently to diffuse the Au ions into the SiNW. The electrical characteristics of a back-gate field-effect transistor with a channel composed of the Au-diffused SiNW show that the Au-diffused SiNW acts as a p-type one. The type conversion phenomenon of the SiNW caused by the diffusion of Au ions is discussed in detail in this paper.",

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AU - Koo, Jamin

AU - Lee, Myeongwon

AU - Kang, Jeongmin

AU - Yoon, Changjoon

AU - Kim, Kwangeun

AU - Jeon, Youngin

AU - Kim, Sangsig

PY - 2010

Y1 - 2010

N2 - The simple type conversion of n-type silicon nanowires (SiNWs) to p-type by the diffusion of Au ions is demonstrated in this study. An Au thin film with a thickness of 10 nm was thermally deposited on an n-type SiNW and a rapid thermal annealing process was performed subsequently to diffuse the Au ions into the SiNW. The electrical characteristics of a back-gate field-effect transistor with a channel composed of the Au-diffused SiNW show that the Au-diffused SiNW acts as a p-type one. The type conversion phenomenon of the SiNW caused by the diffusion of Au ions is discussed in detail in this paper.

AB - The simple type conversion of n-type silicon nanowires (SiNWs) to p-type by the diffusion of Au ions is demonstrated in this study. An Au thin film with a thickness of 10 nm was thermally deposited on an n-type SiNW and a rapid thermal annealing process was performed subsequently to diffuse the Au ions into the SiNW. The electrical characteristics of a back-gate field-effect transistor with a channel composed of the Au-diffused SiNW show that the Au-diffused SiNW acts as a p-type one. The type conversion phenomenon of the SiNW caused by the diffusion of Au ions is discussed in detail in this paper.

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Type conversion of n-type silicon nanowires to p-type by diffusion of gold ions

Abstract

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