The multiple compensated polycrystalline CdZnTe thick films have been deposited by thermal evaporation method. The heavy metals of Pb and Sn have been co-doped with Cl in order to fully compensate Cd vacancies in polycrystalline CdZnTe films due to the limited solubility of Cl in CdZnTe. The drastic variations of the resistivity and conduction type in the CdZnTe films were observed by doping with heavy metals. The intensity of A-center levels, which are normally found in a compensated single CdZnTe crystal, was decreased along with the increase of resistivity in polycrystalline CdZnTe samples. The electron mobility is about 88 cm2 / Vs, and a well resolved gamma ray spectrum of 241Am has been observed for these polycrystalline CdZnTe thick films for the first time.
|Number of pages||5|
|Journal||Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment|
|Publication status||Published - 2008 Jan 1|
Bibliographical noteFunding Information:
This work supported partially by the second Brain Korea 21 Program endorsed by the Korean Ministry of Education and also by a Korea University Grant.
- Heavy metal doping
- Multiple compensation
- Polycrystalline CdZnTe
- Thick films
- Type conversion
- X-ray detector
ASJC Scopus subject areas
- Nuclear and High Energy Physics