Type conversion of polycrystalline CdZnTe thick films by multiple compensation

Ki Hyun Kim; Shin Hang Cho; Jong Hee Seo; Jae Ho Won; Jin Ki Hong; Sun Ung Kim

doi:10.1016/j.nima.2007.10.025

Type conversion of polycrystalline CdZnTe thick films by multiple compensation

Ki Hyun Kim, Shin Hang Cho, Jong Hee Seo, Jae Ho Won, Jin Ki Hong, Sun Ung Kim

School of Health and Environmental Science

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

The multiple compensated polycrystalline CdZnTe thick films have been deposited by thermal evaporation method. The heavy metals of Pb and Sn have been co-doped with Cl in order to fully compensate Cd vacancies in polycrystalline CdZnTe films due to the limited solubility of Cl in CdZnTe. The drastic variations of the resistivity and conduction type in the CdZnTe films were observed by doping with heavy metals. The intensity of A-center levels, which are normally found in a compensated single CdZnTe crystal, was decreased along with the increase of resistivity in polycrystalline CdZnTe samples. The electron mobility is about 88 cm² / Vs, and a well resolved gamma ray spectrum of ²⁴¹Am has been observed for these polycrystalline CdZnTe thick films for the first time.

Original language	English
Pages (from-to)	191-195
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	584
Issue number	1
DOIs	https://doi.org/10.1016/j.nima.2007.10.025
Publication status	Published - 2008 Jan 1

Bibliographical note

Funding Information:
This work supported partially by the second Brain Korea 21 Program endorsed by the Korean Ministry of Education and also by a Korea University Grant.

Keywords

Heavy metal doping
Multiple compensation
Polycrystalline CdZnTe
Semi-insulating
Thick films
Type conversion
X-ray detector

ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

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10.1016/j.nima.2007.10.025

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Type conversion of polycrystalline CdZnTe thick films by multiple compensation. / Kim, Ki Hyun; Cho, Shin Hang; Seo, Jong Hee et al.
In: Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 584, No. 1, 01.01.2008, p. 191-195.

Research output: Contribution to journal › Article › peer-review

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title = "Type conversion of polycrystalline CdZnTe thick films by multiple compensation",

abstract = "The multiple compensated polycrystalline CdZnTe thick films have been deposited by thermal evaporation method. The heavy metals of Pb and Sn have been co-doped with Cl in order to fully compensate Cd vacancies in polycrystalline CdZnTe films due to the limited solubility of Cl in CdZnTe. The drastic variations of the resistivity and conduction type in the CdZnTe films were observed by doping with heavy metals. The intensity of A-center levels, which are normally found in a compensated single CdZnTe crystal, was decreased along with the increase of resistivity in polycrystalline CdZnTe samples. The electron mobility is about 88 cm2 / Vs, and a well resolved gamma ray spectrum of 241Am has been observed for these polycrystalline CdZnTe thick films for the first time.",

keywords = "Heavy metal doping, Multiple compensation, Polycrystalline CdZnTe, Semi-insulating, Thick films, Type conversion, X-ray detector",

author = "Kim, {Ki Hyun} and Cho, {Shin Hang} and Seo, {Jong Hee} and Won, {Jae Ho} and Hong, {Jin Ki} and Kim, {Sun Ung}",

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T1 - Type conversion of polycrystalline CdZnTe thick films by multiple compensation

AU - Kim, Ki Hyun

AU - Cho, Shin Hang

AU - Seo, Jong Hee

AU - Won, Jae Ho

AU - Hong, Jin Ki

AU - Kim, Sun Ung

N1 - Funding Information: This work supported partially by the second Brain Korea 21 Program endorsed by the Korean Ministry of Education and also by a Korea University Grant.

PY - 2008/1/1

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N2 - The multiple compensated polycrystalline CdZnTe thick films have been deposited by thermal evaporation method. The heavy metals of Pb and Sn have been co-doped with Cl in order to fully compensate Cd vacancies in polycrystalline CdZnTe films due to the limited solubility of Cl in CdZnTe. The drastic variations of the resistivity and conduction type in the CdZnTe films were observed by doping with heavy metals. The intensity of A-center levels, which are normally found in a compensated single CdZnTe crystal, was decreased along with the increase of resistivity in polycrystalline CdZnTe samples. The electron mobility is about 88 cm2 / Vs, and a well resolved gamma ray spectrum of 241Am has been observed for these polycrystalline CdZnTe thick films for the first time.

AB - The multiple compensated polycrystalline CdZnTe thick films have been deposited by thermal evaporation method. The heavy metals of Pb and Sn have been co-doped with Cl in order to fully compensate Cd vacancies in polycrystalline CdZnTe films due to the limited solubility of Cl in CdZnTe. The drastic variations of the resistivity and conduction type in the CdZnTe films were observed by doping with heavy metals. The intensity of A-center levels, which are normally found in a compensated single CdZnTe crystal, was decreased along with the increase of resistivity in polycrystalline CdZnTe samples. The electron mobility is about 88 cm2 / Vs, and a well resolved gamma ray spectrum of 241Am has been observed for these polycrystalline CdZnTe thick films for the first time.

KW - Heavy metal doping

KW - Multiple compensation

KW - Polycrystalline CdZnTe

KW - Semi-insulating

KW - Thick films

KW - Type conversion

KW - X-ray detector

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JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

IS - 1

ER -

Type conversion of polycrystalline CdZnTe thick films by multiple compensation

Abstract

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Keywords

ASJC Scopus subject areas

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