Ultra-shallow p+/n junction formed by plasma ion implantation

S. Baek; C. J. Choi; T. Y. Seong; H. Hwang; H. K. Kim; D. W. Moon

doi:10.1557/proc-610-b3.7

Ultra-shallow p⁺/n junction formed by plasma ion implantation

S. Baek, C. J. Choi, T. Y. Seong, H. Hwang, H. K. Kim, D. W. Moon

Research output: Contribution to journal › Conference article › peer-review

Abstract

We have investigated the electrical characteristics, junction depth and defect of ultrashallow junctions formed by using a plasma doping procedure. Compared with ultralow energy boron ion implantation at 500eV, the plasma doping process exhibits both a shallow junction depth and a low sheet resistance. The junction depths of the plasma doped samples were 15 nm and 33 nm after annealing for 10s at 900°C and 950°C, respectively. For the same junction depth, the sheet resistance of the B₂H₆ plasma doped sample is an order of magnitude less than that of the 500eV B ion implanted sample. Based on cross-sectional transmission electron microscope (TEM) and deep level transient spectroscopy (DLTS) analysis, the defects formed by the B₂H₆ plasma doping process can be completely removed by annealing at 950°C for 10s.

Original language	English
Pages (from-to)	B3.7.1-B3.7.6
Journal	Materials Research Society Symposium - Proceedings
Volume	610
DOIs	https://doi.org/10.1557/proc-610-b3.7
Publication status	Published - 2000
Externally published	Yes
Event	Si Front-end Processing -Physics and Technology of Dopant-Defect Interactions II - San Francisco, CA, United States Duration: 2000 Apr 24 → 2000 Apr 27

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/proc-610-b3.7

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title = "Ultra-shallow p+/n junction formed by plasma ion implantation",

abstract = "We have investigated the electrical characteristics, junction depth and defect of ultrashallow junctions formed by using a plasma doping procedure. Compared with ultralow energy boron ion implantation at 500eV, the plasma doping process exhibits both a shallow junction depth and a low sheet resistance. The junction depths of the plasma doped samples were 15 nm and 33 nm after annealing for 10s at 900°C and 950°C, respectively. For the same junction depth, the sheet resistance of the B2H6 plasma doped sample is an order of magnitude less than that of the 500eV B ion implanted sample. Based on cross-sectional transmission electron microscope (TEM) and deep level transient spectroscopy (DLTS) analysis, the defects formed by the B2H6 plasma doping process can be completely removed by annealing at 950°C for 10s.",

author = "S. Baek and Choi, {C. J.} and Seong, {T. Y.} and H. Hwang and Kim, {H. K.} and Moon, {D. W.}",

note = "Funding Information: This research is supported Korea 21 Project. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.; Si Front-end Processing -Physics and Technology of Dopant-Defect Interactions II ; Conference date: 24-04-2000 Through 27-04-2000",

year = "2000",

doi = "10.1557/proc-610-b3.7",

language = "English",

volume = "610",

pages = "B3.7.1--B3.7.6",

journal = "Materials Research Society Symposium Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

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T1 - Ultra-shallow p+/n junction formed by plasma ion implantation

AU - Baek, S.

AU - Choi, C. J.

AU - Seong, T. Y.

AU - Hwang, H.

AU - Kim, H. K.

AU - Moon, D. W.

PY - 2000

Y1 - 2000

N2 - We have investigated the electrical characteristics, junction depth and defect of ultrashallow junctions formed by using a plasma doping procedure. Compared with ultralow energy boron ion implantation at 500eV, the plasma doping process exhibits both a shallow junction depth and a low sheet resistance. The junction depths of the plasma doped samples were 15 nm and 33 nm after annealing for 10s at 900°C and 950°C, respectively. For the same junction depth, the sheet resistance of the B2H6 plasma doped sample is an order of magnitude less than that of the 500eV B ion implanted sample. Based on cross-sectional transmission electron microscope (TEM) and deep level transient spectroscopy (DLTS) analysis, the defects formed by the B2H6 plasma doping process can be completely removed by annealing at 950°C for 10s.

AB - We have investigated the electrical characteristics, junction depth and defect of ultrashallow junctions formed by using a plasma doping procedure. Compared with ultralow energy boron ion implantation at 500eV, the plasma doping process exhibits both a shallow junction depth and a low sheet resistance. The junction depths of the plasma doped samples were 15 nm and 33 nm after annealing for 10s at 900°C and 950°C, respectively. For the same junction depth, the sheet resistance of the B2H6 plasma doped sample is an order of magnitude less than that of the 500eV B ion implanted sample. Based on cross-sectional transmission electron microscope (TEM) and deep level transient spectroscopy (DLTS) analysis, the defects formed by the B2H6 plasma doping process can be completely removed by annealing at 950°C for 10s.

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SP - B3.7.1-B3.7.6

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

T2 - Si Front-end Processing -Physics and Technology of Dopant-Defect Interactions II

Y2 - 24 April 2000 through 27 April 2000

ER -

Ultra-shallow p⁺/n junction formed by plasma ion implantation

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