Ultrafast resistive-switching phenomena observed in NiN-based ReRAM cells

Hee Dong Kim; Ho Myoung An; Tae Geun Kim

doi:10.1109/TED.2012.2202237

Ultrafast resistive-switching phenomena observed in NiN-based ReRAM cells

Hee Dong Kim, Ho Myoung An, Tae Geun Kim

Research output: Contribution to journal › Article › peer-review

43 Citations (Scopus)

Abstract

In this paper, for the first time, we report the fabrication of a resistive random access memory (ReRAM) device using Ti/NiN/Pt structure cells and its observed bipolar resistive-switching characteristics in the pulsed mode. In these experiments, NiN-based ReRAM showed excellent switching behavior under +2.4 V/3.3 ns and -2 V/3.3 ns with a high-to-low resistance ratio > 10 ². The conduction mechanisms at low and high resistance states were verified by ohmic behavior (or conducting filament) and modified space charge-limited conduction from the Mott (metal-insulator) transition, respectively. The resistive-switching process is explained by the model concerning redox reaction mediated formation and rupture of the conducting filament in NiN films. In the reliability test, the device showed an endurance of > 10 ⁷ cycles and a retention time of > 10 ⁵ s at 85 °C. These results show that NiN-based ReRAM can be used as a promising high-speed memory device.

Original language	English
Article number	6221974
Pages (from-to)	2302-2307
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	59
Issue number	9
DOIs	https://doi.org/10.1109/TED.2012.2202237
Publication status	Published - 2012

Keywords

NiN
resistive switching
space charge-limited conduction (SCLC)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2012.2202237

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abstract = "In this paper, for the first time, we report the fabrication of a resistive random access memory (ReRAM) device using Ti/NiN/Pt structure cells and its observed bipolar resistive-switching characteristics in the pulsed mode. In these experiments, NiN-based ReRAM showed excellent switching behavior under +2.4 V/3.3 ns and -2 V/3.3 ns with a high-to-low resistance ratio > 10 2. The conduction mechanisms at low and high resistance states were verified by ohmic behavior (or conducting filament) and modified space charge-limited conduction from the Mott (metal-insulator) transition, respectively. The resistive-switching process is explained by the model concerning redox reaction mediated formation and rupture of the conducting filament in NiN films. In the reliability test, the device showed an endurance of > 10 7 cycles and a retention time of > 10 5 s at 85 °C. These results show that NiN-based ReRAM can be used as a promising high-speed memory device.",

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KW - space charge-limited conduction (SCLC)

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Ultrafast resistive-switching phenomena observed in NiN-based ReRAM cells

Abstract

Keywords

ASJC Scopus subject areas

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