Ultrathin silicon micropackaging for RF MEMS devices

Yong Kook Kim; Yun Kwon Park; Jai Kyeong Kim; Soo Won Kim; Byeong Kwon Ju

doi:10.1149/1.2150166

Ultrathin silicon micropackaging for RF MEMS devices

Yong Kook Kim, Yun Kwon Park, Jai Kyeong Kim, Soo Won Kim, Byeong Kwon Ju

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

In this paper we report a technology for lightweight, small radio-frequency (rf) microelectromechanical system packaging with a short electrical path length. We used an ultrathin silicon substrate as the packaging substrate. Via holes for vertical feed-through were fabricated on the thin silicon wafer. Then, bottom-up gold electroplating was applied to fill via holes. For hermetic sealing, gold-gold direct metal bonding was used in the sealing line. The packaged rf device has a reflection loss below -22 dB and an insertion loss of -0.05 to -0.08 dB. Therefore, with the ultrathin silicon wafer, a lightweight, small device package can be constructed.

Original language	English
Pages (from-to)	G44-G48
Journal	Electrochemical and Solid-State Letters
Volume	9
Issue number	2
DOIs	https://doi.org/10.1149/1.2150166
Publication status	Published - 2006

ASJC Scopus subject areas

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

Access to Document

10.1149/1.2150166

Cite this

@article{be7474d2e7db49a2941429a302140fd3,

title = "Ultrathin silicon micropackaging for RF MEMS devices",

abstract = "In this paper we report a technology for lightweight, small radio-frequency (rf) microelectromechanical system packaging with a short electrical path length. We used an ultrathin silicon substrate as the packaging substrate. Via holes for vertical feed-through were fabricated on the thin silicon wafer. Then, bottom-up gold electroplating was applied to fill via holes. For hermetic sealing, gold-gold direct metal bonding was used in the sealing line. The packaged rf device has a reflection loss below -22 dB and an insertion loss of -0.05 to -0.08 dB. Therefore, with the ultrathin silicon wafer, a lightweight, small device package can be constructed.",

author = "Kim, {Yong Kook} and Park, {Yun Kwon} and Kim, {Jai Kyeong} and Kim, {Soo Won} and Ju, {Byeong Kwon}",

year = "2006",

doi = "10.1149/1.2150166",

language = "English",

volume = "9",

pages = "G44--G48",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society, Inc.",

number = "2",

}

TY - JOUR

T1 - Ultrathin silicon micropackaging for RF MEMS devices

AU - Kim, Yong Kook

AU - Park, Yun Kwon

AU - Kim, Jai Kyeong

AU - Kim, Soo Won

AU - Ju, Byeong Kwon

PY - 2006

Y1 - 2006

N2 - In this paper we report a technology for lightweight, small radio-frequency (rf) microelectromechanical system packaging with a short electrical path length. We used an ultrathin silicon substrate as the packaging substrate. Via holes for vertical feed-through were fabricated on the thin silicon wafer. Then, bottom-up gold electroplating was applied to fill via holes. For hermetic sealing, gold-gold direct metal bonding was used in the sealing line. The packaged rf device has a reflection loss below -22 dB and an insertion loss of -0.05 to -0.08 dB. Therefore, with the ultrathin silicon wafer, a lightweight, small device package can be constructed.

AB - In this paper we report a technology for lightweight, small radio-frequency (rf) microelectromechanical system packaging with a short electrical path length. We used an ultrathin silicon substrate as the packaging substrate. Via holes for vertical feed-through were fabricated on the thin silicon wafer. Then, bottom-up gold electroplating was applied to fill via holes. For hermetic sealing, gold-gold direct metal bonding was used in the sealing line. The packaged rf device has a reflection loss below -22 dB and an insertion loss of -0.05 to -0.08 dB. Therefore, with the ultrathin silicon wafer, a lightweight, small device package can be constructed.

UR - http://www.scopus.com/inward/record.url?scp=33645523279&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33645523279&partnerID=8YFLogxK

U2 - 10.1149/1.2150166

DO - 10.1149/1.2150166

M3 - Article

AN - SCOPUS:33645523279

SN - 1099-0062

VL - 9

SP - G44-G48

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 2

ER -

Ultrathin silicon micropackaging for RF MEMS devices

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this