Ultrawide-Bandgap p-n Heterojunction of Diamond/β-Ga2O3 for a Solar-Blind Photodiode

Hyun Kim; Sergey Tarelkin; Alexander Polyakov; Sergey Troschiev; Sergey Nosukhin; Mikhail Kuznetsov; Jihyun Kim

doi:10.1149/2162-8777/ab89b8

Ultrawide-Bandgap p-n Heterojunction of Diamond/β-Ga₂O₃ for a Solar-Blind Photodiode

Hyun Kim, Sergey Tarelkin, Alexander Polyakov, Sergey Troschiev, Sergey Nosukhin, Mikhail Kuznetsov, Jihyun Kim

Research output: Contribution to journal › Article › peer-review

43 Citations (Scopus)

Abstract

The potential of ultrawide-bandgap (UWBG) semiconductors has not been fully explored because of the difficulty of forming a p-n homojunction. In this study, a mixed-dimensional UWBG p-n heterojunction composed of a p-type diamond substrate and an n-type exfoliated β-Ga₂O₃ nanolayer has been demonstrated via a van der Waals interaction; this type of structure does not suffer from lattice mismatch. Rectifying current-voltage characteristics with a rectification ratio exceeding 10⁷ were obtained with a high reverse hard breakdown voltage of 135 V. This UWBG p-n heterojunction diode exhibited good thermal stability at elevated temperatures, retaining its high rectification ratio and low reverse leakage current. Excellent photoresponse characteristics, including responsivity (12 A W^-1), rejection ratio (8.5 10³), photo-to-dark-current ratio (3900), and fast response/decay characteristics, were observed from the diamond/β-Ga₂O₃ p-n heterojunction photodiode, showing no persistent photoconductivity. The mixed-dimensional p-n heterojunction diode based on two UWBG semiconductors (p-type diamond and n-type β-Ga₂O₃) can be used as a robust building block in next-generation power electronics and solar-blind optoelectronics.

Original language	English
Article number	045004
Journal	ECS Journal of Solid State Science and Technology
Volume	9
Issue number	4
DOIs	https://doi.org/10.1149/2162-8777/ab89b8
Publication status	Published - 2020 Jan 5

Bibliographical note

Funding Information:
This is an open access article distributed under the terms of the Creative Commons Attribution Non-Commercial No Derivatives 4.0 License (CC BY-NC-ND, ), which permits non-commercial reuse, distribution, and reproduction in any medium, provided the original work is not changed in any way and is properly cited. For permission for commercial reuse, please email: . National Research Foundation of Korea https://doi.org/10.13039/501100003725 2017M1A2A2087351 Korea Institute of Energy Technology Evaluation and Planning https://doi.org/10.13039/501100007053 20172010104830 Ministry of Education and Science of the Russian Federation https://doi.org/10.13039/501100003443 K2-2017-068 Russian Science Foundation https://doi.org/10.13039/501100006769 18-72-00232 yes . � 2020 The Author(s). Published on behalf of The Electrochemical Society by IOP Publishing Limited http://creativecommons.org/licenses/by-nc-nd/4.0/

Publisher Copyright:
© 2020 The Author(s). Published on behalf of The Electrochemical Society by IOP Publishing Limited.

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Access to Document

10.1149/2162-8777/ab89b8

Cite this

@article{03b159063c19476ea0ff00759400e14b,

title = "Ultrawide-Bandgap p-n Heterojunction of Diamond/β-Ga2O3 for a Solar-Blind Photodiode",

abstract = "The potential of ultrawide-bandgap (UWBG) semiconductors has not been fully explored because of the difficulty of forming a p-n homojunction. In this study, a mixed-dimensional UWBG p-n heterojunction composed of a p-type diamond substrate and an n-type exfoliated β-Ga2O3 nanolayer has been demonstrated via a van der Waals interaction; this type of structure does not suffer from lattice mismatch. Rectifying current-voltage characteristics with a rectification ratio exceeding 107 were obtained with a high reverse hard breakdown voltage of 135 V. This UWBG p-n heterojunction diode exhibited good thermal stability at elevated temperatures, retaining its high rectification ratio and low reverse leakage current. Excellent photoresponse characteristics, including responsivity (12 A W-1), rejection ratio (8.5 103), photo-to-dark-current ratio (3900), and fast response/decay characteristics, were observed from the diamond/β-Ga2O3 p-n heterojunction photodiode, showing no persistent photoconductivity. The mixed-dimensional p-n heterojunction diode based on two UWBG semiconductors (p-type diamond and n-type β-Ga2O3) can be used as a robust building block in next-generation power electronics and solar-blind optoelectronics.",

author = "Hyun Kim and Sergey Tarelkin and Alexander Polyakov and Sergey Troschiev and Sergey Nosukhin and Mikhail Kuznetsov and Jihyun Kim",

note = "Funding Information: This is an open access article distributed under the terms of the Creative Commons Attribution Non-Commercial No Derivatives 4.0 License (CC BY-NC-ND, ), which permits non-commercial reuse, distribution, and reproduction in any medium, provided the original work is not changed in any way and is properly cited. For permission for commercial reuse, please email: . National Research Foundation of Korea https://doi.org/10.13039/501100003725 2017M1A2A2087351 Korea Institute of Energy Technology Evaluation and Planning https://doi.org/10.13039/501100007053 20172010104830 Ministry of Education and Science of the Russian Federation https://doi.org/10.13039/501100003443 K2-2017-068 Russian Science Foundation https://doi.org/10.13039/501100006769 18-72-00232 yes . � 2020 The Author(s). Published on behalf of The Electrochemical Society by IOP Publishing Limited http://creativecommons.org/licenses/by-nc-nd/4.0/ Publisher Copyright: {\textcopyright} 2020 The Author(s). Published on behalf of The Electrochemical Society by IOP Publishing Limited.",

year = "2020",

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doi = "10.1149/2162-8777/ab89b8",

language = "English",

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T1 - Ultrawide-Bandgap p-n Heterojunction of Diamond/β-Ga2O3 for a Solar-Blind Photodiode

AU - Kim, Hyun

AU - Tarelkin, Sergey

AU - Polyakov, Alexander

AU - Troschiev, Sergey

AU - Nosukhin, Sergey

AU - Kuznetsov, Mikhail

AU - Kim, Jihyun

N1 - Funding Information: This is an open access article distributed under the terms of the Creative Commons Attribution Non-Commercial No Derivatives 4.0 License (CC BY-NC-ND, ), which permits non-commercial reuse, distribution, and reproduction in any medium, provided the original work is not changed in any way and is properly cited. For permission for commercial reuse, please email: . National Research Foundation of Korea https://doi.org/10.13039/501100003725 2017M1A2A2087351 Korea Institute of Energy Technology Evaluation and Planning https://doi.org/10.13039/501100007053 20172010104830 Ministry of Education and Science of the Russian Federation https://doi.org/10.13039/501100003443 K2-2017-068 Russian Science Foundation https://doi.org/10.13039/501100006769 18-72-00232 yes . � 2020 The Author(s). Published on behalf of The Electrochemical Society by IOP Publishing Limited http://creativecommons.org/licenses/by-nc-nd/4.0/ Publisher Copyright: © 2020 The Author(s). Published on behalf of The Electrochemical Society by IOP Publishing Limited.

PY - 2020/1/5

Y1 - 2020/1/5

N2 - The potential of ultrawide-bandgap (UWBG) semiconductors has not been fully explored because of the difficulty of forming a p-n homojunction. In this study, a mixed-dimensional UWBG p-n heterojunction composed of a p-type diamond substrate and an n-type exfoliated β-Ga2O3 nanolayer has been demonstrated via a van der Waals interaction; this type of structure does not suffer from lattice mismatch. Rectifying current-voltage characteristics with a rectification ratio exceeding 107 were obtained with a high reverse hard breakdown voltage of 135 V. This UWBG p-n heterojunction diode exhibited good thermal stability at elevated temperatures, retaining its high rectification ratio and low reverse leakage current. Excellent photoresponse characteristics, including responsivity (12 A W-1), rejection ratio (8.5 103), photo-to-dark-current ratio (3900), and fast response/decay characteristics, were observed from the diamond/β-Ga2O3 p-n heterojunction photodiode, showing no persistent photoconductivity. The mixed-dimensional p-n heterojunction diode based on two UWBG semiconductors (p-type diamond and n-type β-Ga2O3) can be used as a robust building block in next-generation power electronics and solar-blind optoelectronics.

AB - The potential of ultrawide-bandgap (UWBG) semiconductors has not been fully explored because of the difficulty of forming a p-n homojunction. In this study, a mixed-dimensional UWBG p-n heterojunction composed of a p-type diamond substrate and an n-type exfoliated β-Ga2O3 nanolayer has been demonstrated via a van der Waals interaction; this type of structure does not suffer from lattice mismatch. Rectifying current-voltage characteristics with a rectification ratio exceeding 107 were obtained with a high reverse hard breakdown voltage of 135 V. This UWBG p-n heterojunction diode exhibited good thermal stability at elevated temperatures, retaining its high rectification ratio and low reverse leakage current. Excellent photoresponse characteristics, including responsivity (12 A W-1), rejection ratio (8.5 103), photo-to-dark-current ratio (3900), and fast response/decay characteristics, were observed from the diamond/β-Ga2O3 p-n heterojunction photodiode, showing no persistent photoconductivity. The mixed-dimensional p-n heterojunction diode based on two UWBG semiconductors (p-type diamond and n-type β-Ga2O3) can be used as a robust building block in next-generation power electronics and solar-blind optoelectronics.

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