Understanding nonpolar GaN growth through kinetic Wulff plots

Qian Sun, Christopher D. Yerino, Tsung Shine Ko, Yong Suk Cho, In Hwan Lee, Jung Han, Michael E. Coltrin

Research output: Contribution to journalArticlepeer-review

104 Citations (Scopus)


In this paper we provide explanations to the complex growth phenomena of GaN heteroepitaxy on nonpolar orientations using the concept of kinetic Wulff plots (or v -plots). Quantitative mapping of kinetic Wulff plots in polar, semipolar, and nonpolar angles are achieved using a differential measurement technique from selective area growth. An accurate knowledge of the topography of kinetic Wulff plots serves as an important stepping stone toward model-based control of nonpolar GaN growth. Examples are illustrated to correlate growth dynamics based on the kinetic Wulff plots with commonly observed features, including anisotropic nucleation islands, highly striated surfaces, and pentagonal or triangular pits.

Original languageEnglish
Article number093523
JournalJournal of Applied Physics
Issue number9
Publication statusPublished - 2008
Externally publishedYes

Bibliographical note

Funding Information:
This work was finally supported by the United States Department of Energy (US DOE) under Contract No. DE-FC26-07NT43227. The work performed at Sandia National Laboratories was supported by the US DOE under Contract No. DE-AC04-94AL85000, with funding from the Office of Basic Energy Sciences Division of Materials Sciences and Engineering. The authors acknowledge the kind support from Dr. Nate Gardner at Lumileds and the discussion with Dr. David J. Srolovitz at Princeton University.

ASJC Scopus subject areas

  • General Physics and Astronomy


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