Abstract
In this paper we provide explanations to the complex growth phenomena of GaN heteroepitaxy on nonpolar orientations using the concept of kinetic Wulff plots (or v -plots). Quantitative mapping of kinetic Wulff plots in polar, semipolar, and nonpolar angles are achieved using a differential measurement technique from selective area growth. An accurate knowledge of the topography of kinetic Wulff plots serves as an important stepping stone toward model-based control of nonpolar GaN growth. Examples are illustrated to correlate growth dynamics based on the kinetic Wulff plots with commonly observed features, including anisotropic nucleation islands, highly striated surfaces, and pentagonal or triangular pits.
Original language | English |
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Article number | 093523 |
Journal | Journal of Applied Physics |
Volume | 104 |
Issue number | 9 |
DOIs | |
Publication status | Published - 2008 |
Externally published | Yes |
Bibliographical note
Funding Information:This work was finally supported by the United States Department of Energy (US DOE) under Contract No. DE-FC26-07NT43227. The work performed at Sandia National Laboratories was supported by the US DOE under Contract No. DE-AC04-94AL85000, with funding from the Office of Basic Energy Sciences Division of Materials Sciences and Engineering. The authors acknowledge the kind support from Dr. Nate Gardner at Lumileds and the discussion with Dr. David J. Srolovitz at Princeton University.
ASJC Scopus subject areas
- General Physics and Astronomy