Understanding of a-Si:H(p)/c-Si(n) heterojunction solar cell through analysis of cells with point-contacted p/n junction

Young Woo Ok; Min Gu Kang; Donghwan Kim; Jeong Chul Lee; Kyung Hoon Yoon

doi:10.1016/j.cap.2009.01.010

Understanding of a-Si:H(p)/c-Si(n) heterojunction solar cell through analysis of cells with point-contacted p/n junction

Young Woo Ok, Min Gu Kang, Donghwan Kim, Jeong Chul Lee, Kyung Hoon Yoon

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

We fabricated point-contacted a-Si:H(p)/c-Si(n) heterojunction solar cells using patterned SiO₂ and investigated their electrical properties using the light current-voltage (I-V) curve and Suns-V_oc measurements. The light I-V curves showed bias-dependent changes according to the applied voltage in the point-contacted cells, especially in the samples with a long distance between the point-contacted junctions. The Suns-V_oc measurements showed that the bias-dependence of the light I-V curves did not originate from the recombination in the SiO₂/Si or a-Si:H(p)/c-Si(n) interface, but from the series resistances. It is possible to explain the bias-dependent light I-V curve in terms of the conductivity of a-Si:H(p) and difference in the electrical contact properties between a-Si:H(p), ZnO and c-Si(n). These results mean that the electrical properties of the a-Si:H(p) layer and the contact properties with this layer are also critical to obtain a high J_sc and fill factor in n-type based Si heterojunction solar cells.

Original language	English
Pages (from-to)	1186-1190
Number of pages	5
Journal	Current Applied Physics
Volume	9
Issue number	6
DOIs	https://doi.org/10.1016/j.cap.2009.01.010
Publication status	Published - 2009 Nov

Bibliographical note

Funding Information:
This work was supported by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD- KRF 2007-357-D00154). The authors would like to thank Prof. Andres Cuevas, Dr. Daniel Macdonald and Dr. Jason Tan, Department of Engineering in the Australian National University, for the measurement and discussion of Suns-V oc .

Keywords

Heterojunction
I-V analysis
Solar cells
a-Si/c-Si

ASJC Scopus subject areas

General Materials Science
General Physics and Astronomy

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10.1016/j.cap.2009.01.010

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@article{a2d3b174220d4110b25d46fb324dace9,

title = "Understanding of a-Si:H(p)/c-Si(n) heterojunction solar cell through analysis of cells with point-contacted p/n junction",

abstract = "We fabricated point-contacted a-Si:H(p)/c-Si(n) heterojunction solar cells using patterned SiO2 and investigated their electrical properties using the light current-voltage (I-V) curve and Suns-Voc measurements. The light I-V curves showed bias-dependent changes according to the applied voltage in the point-contacted cells, especially in the samples with a long distance between the point-contacted junctions. The Suns-Voc measurements showed that the bias-dependence of the light I-V curves did not originate from the recombination in the SiO2/Si or a-Si:H(p)/c-Si(n) interface, but from the series resistances. It is possible to explain the bias-dependent light I-V curve in terms of the conductivity of a-Si:H(p) and difference in the electrical contact properties between a-Si:H(p), ZnO and c-Si(n). These results mean that the electrical properties of the a-Si:H(p) layer and the contact properties with this layer are also critical to obtain a high Jsc and fill factor in n-type based Si heterojunction solar cells.",

keywords = "Heterojunction, I-V analysis, Solar cells, a-Si/c-Si",

author = "Ok, {Young Woo} and Kang, {Min Gu} and Donghwan Kim and Lee, {Jeong Chul} and Yoon, {Kyung Hoon}",

note = "Funding Information: This work was supported by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD- KRF 2007-357-D00154). The authors would like to thank Prof. Andres Cuevas, Dr. Daniel Macdonald and Dr. Jason Tan, Department of Engineering in the Australian National University, for the measurement and discussion of Suns-V oc .",

year = "2009",

month = nov,

doi = "10.1016/j.cap.2009.01.010",

language = "English",

volume = "9",

pages = "1186--1190",

journal = "Current Applied Physics",

issn = "1567-1739",

publisher = "Elsevier B.V.",

number = "6",

}

TY - JOUR

T1 - Understanding of a-Si:H(p)/c-Si(n) heterojunction solar cell through analysis of cells with point-contacted p/n junction

AU - Ok, Young Woo

AU - Kang, Min Gu

AU - Kim, Donghwan

AU - Lee, Jeong Chul

AU - Yoon, Kyung Hoon

N1 - Funding Information: This work was supported by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD- KRF 2007-357-D00154). The authors would like to thank Prof. Andres Cuevas, Dr. Daniel Macdonald and Dr. Jason Tan, Department of Engineering in the Australian National University, for the measurement and discussion of Suns-V oc .

PY - 2009/11

Y1 - 2009/11

N2 - We fabricated point-contacted a-Si:H(p)/c-Si(n) heterojunction solar cells using patterned SiO2 and investigated their electrical properties using the light current-voltage (I-V) curve and Suns-Voc measurements. The light I-V curves showed bias-dependent changes according to the applied voltage in the point-contacted cells, especially in the samples with a long distance between the point-contacted junctions. The Suns-Voc measurements showed that the bias-dependence of the light I-V curves did not originate from the recombination in the SiO2/Si or a-Si:H(p)/c-Si(n) interface, but from the series resistances. It is possible to explain the bias-dependent light I-V curve in terms of the conductivity of a-Si:H(p) and difference in the electrical contact properties between a-Si:H(p), ZnO and c-Si(n). These results mean that the electrical properties of the a-Si:H(p) layer and the contact properties with this layer are also critical to obtain a high Jsc and fill factor in n-type based Si heterojunction solar cells.

AB - We fabricated point-contacted a-Si:H(p)/c-Si(n) heterojunction solar cells using patterned SiO2 and investigated their electrical properties using the light current-voltage (I-V) curve and Suns-Voc measurements. The light I-V curves showed bias-dependent changes according to the applied voltage in the point-contacted cells, especially in the samples with a long distance between the point-contacted junctions. The Suns-Voc measurements showed that the bias-dependence of the light I-V curves did not originate from the recombination in the SiO2/Si or a-Si:H(p)/c-Si(n) interface, but from the series resistances. It is possible to explain the bias-dependent light I-V curve in terms of the conductivity of a-Si:H(p) and difference in the electrical contact properties between a-Si:H(p), ZnO and c-Si(n). These results mean that the electrical properties of the a-Si:H(p) layer and the contact properties with this layer are also critical to obtain a high Jsc and fill factor in n-type based Si heterojunction solar cells.

KW - Heterojunction

KW - I-V analysis

KW - Solar cells

KW - a-Si/c-Si

UR - http://www.scopus.com/inward/record.url?scp=67349155554&partnerID=8YFLogxK

U2 - 10.1016/j.cap.2009.01.010

DO - 10.1016/j.cap.2009.01.010

M3 - Article

AN - SCOPUS:67349155554

SN - 1567-1739

VL - 9

SP - 1186

EP - 1190

JO - Current Applied Physics

JF - Current Applied Physics

IS - 6

ER -

Understanding of a-Si:H(p)/c-Si(n) heterojunction solar cell through analysis of cells with point-contacted p/n junction

Abstract

Bibliographical note

Keywords

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