Unipolar resistive switching properties of amorphous Pr 0.7Ca0.3MnO3 films grown on a Pt/Ti/SiO 2/Si substrate

Tae Geun Seong; Beom Seok Lee; Kyu Bum Choi; Sang Hyo Kweon; Beom Yong Kim; Kyooho Jung; Ji Won Moon; Kee Jeong Lee; Kwon Hong; Sahn Nahm

doi:10.1016/j.cap.2014.01.012

Unipolar resistive switching properties of amorphous Pr _0.7Ca_0.3MnO₃ films grown on a Pt/Ti/SiO ₂/Si substrate

Tae Geun Seong, Beom Seok Lee, Kyu Bum Choi, Sang Hyo Kweon, Beom Yong Kim, Kyooho Jung, Ji Won Moon, Kee Jeong Lee, Kwon Hong, Sahn Nahm

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Amorphous Pr_0.7Ca_0.3MnO₃ (APCMO) films were grown on a Pt/Ti/SiO₂/Si (Pt-Si) substrate at temperatures below 500 C and the Pt/APCMO/Pt-Si device showed unipolar resistive switching behavior. Conduction behavior of the low resistance state (LRS) of the Pt/APCMO/Pt-Si device followed Ohm's law, and the resistance in LRS was independent of the size of the device, indicating that the conduction behavior in LRS can be explained by the presence of the conductive filaments. On the other hand, the resistance in the high resistance state (HRS) decreased with increasing the device size, and the conduction mechanism in the HRS was explained by Schottky emission.

Original language	English
Pages (from-to)	538-542
Number of pages	5
Journal	Current Applied Physics
Volume	14
Issue number	4
DOIs	https://doi.org/10.1016/j.cap.2014.01.012
Publication status	Published - 2014 Apr

Keywords

PCMO
ReRAM
Resistive switching
Thin film

ASJC Scopus subject areas

General Materials Science
General Physics and Astronomy

Access to Document

10.1016/j.cap.2014.01.012

Cite this

@article{73127dd849ea48a0b07d22df777f947f,

title = "Unipolar resistive switching properties of amorphous Pr 0.7Ca0.3MnO3 films grown on a Pt/Ti/SiO 2/Si substrate",

abstract = "Amorphous Pr0.7Ca0.3MnO3 (APCMO) films were grown on a Pt/Ti/SiO2/Si (Pt-Si) substrate at temperatures below 500 C and the Pt/APCMO/Pt-Si device showed unipolar resistive switching behavior. Conduction behavior of the low resistance state (LRS) of the Pt/APCMO/Pt-Si device followed Ohm's law, and the resistance in LRS was independent of the size of the device, indicating that the conduction behavior in LRS can be explained by the presence of the conductive filaments. On the other hand, the resistance in the high resistance state (HRS) decreased with increasing the device size, and the conduction mechanism in the HRS was explained by Schottky emission.",

keywords = "PCMO, ReRAM, Resistive switching, Thin film",

author = "Seong, {Tae Geun} and Lee, {Beom Seok} and Choi, {Kyu Bum} and Kweon, {Sang Hyo} and Kim, {Beom Yong} and Kyooho Jung and Moon, {Ji Won} and Lee, {Kee Jeong} and Kwon Hong and Sahn Nahm",

year = "2014",

month = apr,

doi = "10.1016/j.cap.2014.01.012",

language = "English",

volume = "14",

pages = "538--542",

journal = "Current Applied Physics",

issn = "1567-1739",

publisher = "Elsevier B.V.",

number = "4",

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TY - JOUR

T1 - Unipolar resistive switching properties of amorphous Pr 0.7Ca0.3MnO3 films grown on a Pt/Ti/SiO 2/Si substrate

AU - Seong, Tae Geun

AU - Lee, Beom Seok

AU - Choi, Kyu Bum

AU - Kweon, Sang Hyo

AU - Kim, Beom Yong

AU - Jung, Kyooho

AU - Moon, Ji Won

AU - Lee, Kee Jeong

AU - Hong, Kwon

AU - Nahm, Sahn

PY - 2014/4

Y1 - 2014/4

N2 - Amorphous Pr0.7Ca0.3MnO3 (APCMO) films were grown on a Pt/Ti/SiO2/Si (Pt-Si) substrate at temperatures below 500 C and the Pt/APCMO/Pt-Si device showed unipolar resistive switching behavior. Conduction behavior of the low resistance state (LRS) of the Pt/APCMO/Pt-Si device followed Ohm's law, and the resistance in LRS was independent of the size of the device, indicating that the conduction behavior in LRS can be explained by the presence of the conductive filaments. On the other hand, the resistance in the high resistance state (HRS) decreased with increasing the device size, and the conduction mechanism in the HRS was explained by Schottky emission.

AB - Amorphous Pr0.7Ca0.3MnO3 (APCMO) films were grown on a Pt/Ti/SiO2/Si (Pt-Si) substrate at temperatures below 500 C and the Pt/APCMO/Pt-Si device showed unipolar resistive switching behavior. Conduction behavior of the low resistance state (LRS) of the Pt/APCMO/Pt-Si device followed Ohm's law, and the resistance in LRS was independent of the size of the device, indicating that the conduction behavior in LRS can be explained by the presence of the conductive filaments. On the other hand, the resistance in the high resistance state (HRS) decreased with increasing the device size, and the conduction mechanism in the HRS was explained by Schottky emission.

KW - PCMO

KW - ReRAM

KW - Resistive switching

KW - Thin film

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U2 - 10.1016/j.cap.2014.01.012

DO - 10.1016/j.cap.2014.01.012

M3 - Article

AN - SCOPUS:84893941165

SN - 1567-1739

VL - 14

SP - 538

EP - 542

JO - Current Applied Physics

JF - Current Applied Physics

IS - 4

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