Use of a precursor solution to fill the gaps between indium tin oxide nanorods, for preparation of three-dimensional CuInGaS2 thin-film solar cells

Van Ben Chu; Jin Woo Cho; Se Jin Park; Hoo Keun Park; Young Rag Do; Byoung Koun Min

doi:10.1007/s11164-013-1454-z

Use of a precursor solution to fill the gaps between indium tin oxide nanorods, for preparation of three-dimensional CuInGaS₂ thin-film solar cells

Van Ben Chu, Jin Woo Cho, Se Jin Park, Hoo Keun Park, Young Rag Do, Byoung Koun Min

GREEN SCHOOL (Graduate School of Energy and Environment)

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We have fabricated a three-dimensional (3D) nanostructured indium tin oxide (ITO) film in which the spaces were filled by use of a Cu, In, and Ga precursor solution. This solution has potential for use in bulk heterojunction CuIn _x Ga_1-x S₂ (CIGS) thin-film solar cells. ITO nanorod films ~700 nm thick on glass substrates were synthesized by radio-frequency magnetron sputtering deposition. To ensure complete filling of the gaps in ITO nanorod films, a polymeric binder-free precursor solution was used. In addition, a two-step heating process (oxidation and sulfurization) was used after coating of the precursor solution to make a CIGS absorber film with a minimum of carbon impurities. Superstrate-type solar cell devices with 3D nanostructured films (CIGS-ITO) had a photovoltaic efficiency of 1.11 % despite the absence of a buffer layer (e.g. CdS) between the CIGS and ITO.

Original language	English
Pages (from-to)	49-56
Number of pages	8
Journal	Research on Chemical Intermediates
Volume	40
Issue number	1
DOIs	https://doi.org/10.1007/s11164-013-1454-z
Publication status	Published - 2014 Jan

Keywords

CIGS
Gap filling
ITO nanorods
Solar cells
Superstrate-type

ASJC Scopus subject areas

Chemistry(all)

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1007/s11164-013-1454-z

Cite this

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title = "Use of a precursor solution to fill the gaps between indium tin oxide nanorods, for preparation of three-dimensional CuInGaS2 thin-film solar cells",

abstract = "We have fabricated a three-dimensional (3D) nanostructured indium tin oxide (ITO) film in which the spaces were filled by use of a Cu, In, and Ga precursor solution. This solution has potential for use in bulk heterojunction CuIn x Ga1-x S2 (CIGS) thin-film solar cells. ITO nanorod films ~700 nm thick on glass substrates were synthesized by radio-frequency magnetron sputtering deposition. To ensure complete filling of the gaps in ITO nanorod films, a polymeric binder-free precursor solution was used. In addition, a two-step heating process (oxidation and sulfurization) was used after coating of the precursor solution to make a CIGS absorber film with a minimum of carbon impurities. Superstrate-type solar cell devices with 3D nanostructured films (CIGS-ITO) had a photovoltaic efficiency of 1.11 % despite the absence of a buffer layer (e.g. CdS) between the CIGS and ITO.",

keywords = "CIGS, Gap filling, ITO nanorods, Solar cells, Superstrate-type",

author = "Chu, {Van Ben} and Cho, {Jin Woo} and Park, {Se Jin} and Park, {Hoo Keun} and Do, {Young Rag} and Min, {Byoung Koun}",

note = "Funding Information: Acknowledgments This work was supported by a National Research Foundation of Korea grant (NRF-2009-C1AAA001-0092935 and 2011-0017449) and partly by a National Research Foundation of Korea grant funded by the Korean Government (MEST){\textquoteright}{\textquoteright} (2012, University–Institute Cooperation Program).",

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AU - Chu, Van Ben

AU - Cho, Jin Woo

AU - Park, Se Jin

AU - Park, Hoo Keun

AU - Do, Young Rag

AU - Min, Byoung Koun

N1 - Funding Information: Acknowledgments This work was supported by a National Research Foundation of Korea grant (NRF-2009-C1AAA001-0092935 and 2011-0017449) and partly by a National Research Foundation of Korea grant funded by the Korean Government (MEST)’’ (2012, University–Institute Cooperation Program).

PY - 2014/1

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N2 - We have fabricated a three-dimensional (3D) nanostructured indium tin oxide (ITO) film in which the spaces were filled by use of a Cu, In, and Ga precursor solution. This solution has potential for use in bulk heterojunction CuIn x Ga1-x S2 (CIGS) thin-film solar cells. ITO nanorod films ~700 nm thick on glass substrates were synthesized by radio-frequency magnetron sputtering deposition. To ensure complete filling of the gaps in ITO nanorod films, a polymeric binder-free precursor solution was used. In addition, a two-step heating process (oxidation and sulfurization) was used after coating of the precursor solution to make a CIGS absorber film with a minimum of carbon impurities. Superstrate-type solar cell devices with 3D nanostructured films (CIGS-ITO) had a photovoltaic efficiency of 1.11 % despite the absence of a buffer layer (e.g. CdS) between the CIGS and ITO.

AB - We have fabricated a three-dimensional (3D) nanostructured indium tin oxide (ITO) film in which the spaces were filled by use of a Cu, In, and Ga precursor solution. This solution has potential for use in bulk heterojunction CuIn x Ga1-x S2 (CIGS) thin-film solar cells. ITO nanorod films ~700 nm thick on glass substrates were synthesized by radio-frequency magnetron sputtering deposition. To ensure complete filling of the gaps in ITO nanorod films, a polymeric binder-free precursor solution was used. In addition, a two-step heating process (oxidation and sulfurization) was used after coating of the precursor solution to make a CIGS absorber film with a minimum of carbon impurities. Superstrate-type solar cell devices with 3D nanostructured films (CIGS-ITO) had a photovoltaic efficiency of 1.11 % despite the absence of a buffer layer (e.g. CdS) between the CIGS and ITO.

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