Use of an indium zinc oxide interlayer for forming Ag-based Ohmic contacts to p-type GaN for UV-light-emitting diodes

Keun Yong Ban; Hyun Gi Hong; Do Young Noh; Tae Yeon Seong; June O. Song; Donghwan Kim

doi:10.1088/0268-1242/20/9/006

Use of an indium zinc oxide interlayer for forming Ag-based Ohmic contacts to p-type GaN for UV-light-emitting diodes

Keun Yong Ban^*
, Hyun Gi Hong
, Do Young Noh
, Tae Yeon Seong
, June O. Song
, Donghwan Kim

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

We have investigated indium-doped ZnO(IZO)/Ag Ohmic contacts to p-type GaN for use in UV-light-emitting diodes (LEDs). The as-deposited sample shows rectifying behaviour. However, the samples become Ohmic when annealed at temperature of 330-530 °C for 1 min in air. For example, the contact produces specific contact resistance of 5.51 × 10^-4 Ω cm² upon annealing at 530 °C. In addition, the 530 °C annealed IZO/Ag contacts give reflectance of 82.3% at a wavelength of 405 nm, which is better than that (70.6%) of the single Ag contacts. Near-UV LEDs fabricated with the IZO/Ag contacts give forward voltage of 3.24 V at an injection current of 20 mA, which is better than that with the single Ag contacts. On the basis of x-ray photoemission spectroscopy and scanning transmission electron microscopy results, possible Ohmic formation mechanisms are described.

Original language	English
Pages (from-to)	921-924
Number of pages	4
Journal	Semiconductor Science and Technology
Volume	20
Issue number	9
DOIs	https://doi.org/10.1088/0268-1242/20/9/006
Publication status	Published - 2005 Sept 1

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/20/9/006

Cite this

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title = "Use of an indium zinc oxide interlayer for forming Ag-based Ohmic contacts to p-type GaN for UV-light-emitting diodes",

abstract = "We have investigated indium-doped ZnO(IZO)/Ag Ohmic contacts to p-type GaN for use in UV-light-emitting diodes (LEDs). The as-deposited sample shows rectifying behaviour. However, the samples become Ohmic when annealed at temperature of 330-530 °C for 1 min in air. For example, the contact produces specific contact resistance of 5.51 × 10-4 Ω cm2 upon annealing at 530 °C. In addition, the 530 °C annealed IZO/Ag contacts give reflectance of 82.3\% at a wavelength of 405 nm, which is better than that (70.6\%) of the single Ag contacts. Near-UV LEDs fabricated with the IZO/Ag contacts give forward voltage of 3.24 V at an injection current of 20 mA, which is better than that with the single Ag contacts. On the basis of x-ray photoemission spectroscopy and scanning transmission electron microscopy results, possible Ohmic formation mechanisms are described.",

author = "Ban, \{Keun Yong\} and Hong, \{Hyun Gi\} and Noh, \{Do Young\} and Seong, \{Tae Yeon\} and Song, \{June O.\} and Donghwan Kim",

year = "2005",

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doi = "10.1088/0268-1242/20/9/006",

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TY - JOUR

T1 - Use of an indium zinc oxide interlayer for forming Ag-based Ohmic contacts to p-type GaN for UV-light-emitting diodes

AU - Ban, Keun Yong

AU - Hong, Hyun Gi

AU - Noh, Do Young

AU - Seong, Tae Yeon

AU - Song, June O.

AU - Kim, Donghwan

PY - 2005/9/1

Y1 - 2005/9/1

N2 - We have investigated indium-doped ZnO(IZO)/Ag Ohmic contacts to p-type GaN for use in UV-light-emitting diodes (LEDs). The as-deposited sample shows rectifying behaviour. However, the samples become Ohmic when annealed at temperature of 330-530 °C for 1 min in air. For example, the contact produces specific contact resistance of 5.51 × 10-4 Ω cm2 upon annealing at 530 °C. In addition, the 530 °C annealed IZO/Ag contacts give reflectance of 82.3% at a wavelength of 405 nm, which is better than that (70.6%) of the single Ag contacts. Near-UV LEDs fabricated with the IZO/Ag contacts give forward voltage of 3.24 V at an injection current of 20 mA, which is better than that with the single Ag contacts. On the basis of x-ray photoemission spectroscopy and scanning transmission electron microscopy results, possible Ohmic formation mechanisms are described.

AB - We have investigated indium-doped ZnO(IZO)/Ag Ohmic contacts to p-type GaN for use in UV-light-emitting diodes (LEDs). The as-deposited sample shows rectifying behaviour. However, the samples become Ohmic when annealed at temperature of 330-530 °C for 1 min in air. For example, the contact produces specific contact resistance of 5.51 × 10-4 Ω cm2 upon annealing at 530 °C. In addition, the 530 °C annealed IZO/Ag contacts give reflectance of 82.3% at a wavelength of 405 nm, which is better than that (70.6%) of the single Ag contacts. Near-UV LEDs fabricated with the IZO/Ag contacts give forward voltage of 3.24 V at an injection current of 20 mA, which is better than that with the single Ag contacts. On the basis of x-ray photoemission spectroscopy and scanning transmission electron microscopy results, possible Ohmic formation mechanisms are described.

UR - https://www.scopus.com/pages/publications/23944527303

UR - https://www.scopus.com/pages/publications/23944527303#tab=citedBy

U2 - 10.1088/0268-1242/20/9/006

DO - 10.1088/0268-1242/20/9/006

M3 - Article

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SN - 0268-1242

VL - 20

SP - 921

EP - 924

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 9

ER -

Use of an indium zinc oxide interlayer for forming Ag-based Ohmic contacts to p-type GaN for UV-light-emitting diodes

Abstract

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