Using Self-Aligned Si Barrier to Enhance the Contrast Ratio and Performance of Pixelated Light Emitting Diode for Vehicle Headlamp

  • Sang Youl Lee
  • , Doyub Kim
  • , Kiman Kang
  • , Eunduk Lee
  • , Yoomin Jo
  • , Se Yeon Jung
  • , Jeong Tak Oh
  • , Hwan Hee Jeong
  • , Tae Yeon Seong*
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

We investigate the effects of pixel distance and light emitting diode (LED) thickness on the luminance distribution and contrast ratio of a 16 × 16 blue and white LED array for vehicle headlamp application. With increasing pixel distance from 10 to 20 μm, the contrast ratio increased from 33:1 to 51:1 for white LEDs and from 37:1 to 48:1 for blue LEDs. As the LED thickness decreased from 4.5 to 2.0 μm, the contrast ratio increased from 37:1 to 62:1 for blue LEDs and from 33:1 to 97:1 for white LEDs. The blue LEDs fabricated with ultrathin-GaN and self-aligned Si barrier showed the contrast ratio of 48:1 and 39:1, respectively, while the white LEDs with ultrathin-GaN and self-aligned Si barrier yielded the contrast ratio of and 89:1 and 99:1. Further, LEDs with the self-aligned Si barrier had better luminance uniformity than those with the ultrathin-GaN. LED array with the self-aligned Si barrier exhibited narrower dark space than that with the ultrathin-GaN. At 60 mA, the LED with the self-aligned Si barrier gave 6% higher light output than that with the ultrathin-GaN. A headlamp unit using 16 × 16 LED array was demonstrated with the Si self-aligned barrier.

Original languageEnglish
Article number045003
JournalECS Journal of Solid State Science and Technology
Volume10
Issue number4
DOIs
Publication statusPublished - 2021 Apr

Bibliographical note

Publisher Copyright:
© 2021 The Electrochemical Society ("ECS"). Published on behalf of ECS by IOP Publishing Limited.

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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