UV ozone treatment for improving contact resistance on graphene

Chung Wei Chen, Fan Ren, Gou Chung Chi, Sheng Chun Hung, Y. P. Huang, Jihyun Kim, Ivan I. Kravchenko, Stephen J. Pearton

    Research output: Contribution to journalArticlepeer-review

    47 Citations (Scopus)

    Abstract

    Optimized UV ozone cleaning of graphene layers on SiO2/Si substrates is shown to improve contact resistance of e-beam evaporated Ti/Au contacts by three orders of magnitude (3 × 10-6 Ω-cm 2) compared to untreated surfaces (4 × 10-3 Ω-cm2). Subsequent annealing at 300 °C lowers the minimum value achieved to 7 × 10-7 Ω-cm2. Ozone exposure beyond an optimum time (6 min in these experiments) led to a sharp increase in sheet resistance of the graphene, producing degraded contact resistance. The UV ozone treatment is a simple and effective method for producing high quality contacts to graphene.

    Original languageEnglish
    Article number060604
    JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
    Volume30
    Issue number6
    DOIs
    Publication statusPublished - 2012 Nov

    Bibliographical note

    Funding Information:
    This work was supported by the National Science Council of Taiwan under Grant No. NSC 100-2112-M-009-018, NSF contract number ECCS 0901711 monitored by Dr. Yogesh B. Gianchandani and by NSF (J.M. Zavada). A portion of this research was conducted at the Center for Nanophase Materials Sciences, which was sponsored at Oak Ridge National Laboratory by the Office of Basic Energy Sciences, U.S. Department of Energy.

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Instrumentation
    • Process Chemistry and Technology
    • Surfaces, Coatings and Films
    • Electrical and Electronic Engineering
    • Materials Chemistry

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