V-grooved GaAs/AlGaAs quantum wire laser array confined by junction-isolation stripes

T. G. Kim, E. K. Kim, S. K. Min, J. H. Park

    Research output: Contribution to journalArticlepeer-review

    3 Citations (Scopus)

    Abstract

    A new GaAs/AlGaAs quantum wire laser array (QWLA) confined by p-n junction-isolation stripes is reported. The QWLA is fabricated with 1.5 μm wide stripe-channels through the quantum wire (QWR) active regions using two-step MOCVD growth with a wet etching technique. Prior to the device fabrication, active channel- and leakage-current are calculated using a d.c. equivalent circuit to quantitatively estimate the current-confinement effect. QWLA consisting of 10 QWRs has currently demonstrated a maximum output power as high as 18.2 mW at 385 mA and a threshold current density as low as 0.23 kA m-2 facet-1 under room temperature pulsed operation.

    Original languageEnglish
    Pages (from-to)1079-1081
    Number of pages3
    JournalSolid-State Electronics
    Volume41
    Issue number8
    DOIs
    Publication statusPublished - 1997 Aug

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry

    Fingerprint

    Dive into the research topics of 'V-grooved GaAs/AlGaAs quantum wire laser array confined by junction-isolation stripes'. Together they form a unique fingerprint.

    Cite this