V-grooved GaAs/AlGaAs quantum wire laser array confined by junction-isolation stripes

T. G. Kim; E. K. Kim; S. K. Min; J. H. Park

doi:10.1016/S0038-1101(97)00047-6

V-grooved GaAs/AlGaAs quantum wire laser array confined by junction-isolation stripes

T. G. Kim, E. K. Kim, S. K. Min, J. H. Park

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

A new GaAs/AlGaAs quantum wire laser array (QWLA) confined by p-n junction-isolation stripes is reported. The QWLA is fabricated with 1.5 μm wide stripe-channels through the quantum wire (QWR) active regions using two-step MOCVD growth with a wet etching technique. Prior to the device fabrication, active channel- and leakage-current are calculated using a d.c. equivalent circuit to quantitatively estimate the current-confinement effect. QWLA consisting of 10 QWRs has currently demonstrated a maximum output power as high as 18.2 mW at 385 mA and a threshold current density as low as 0.23 kA m^-2 facet^-1 under room temperature pulsed operation.

Original language	English
Pages (from-to)	1079-1081
Number of pages	3
Journal	Solid-State Electronics
Volume	41
Issue number	8
DOIs	https://doi.org/10.1016/S0038-1101(97)00047-6
Publication status	Published - 1997 Aug

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/S0038-1101(97)00047-6

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title = "V-grooved GaAs/AlGaAs quantum wire laser array confined by junction-isolation stripes",

abstract = "A new GaAs/AlGaAs quantum wire laser array (QWLA) confined by p-n junction-isolation stripes is reported. The QWLA is fabricated with 1.5 μm wide stripe-channels through the quantum wire (QWR) active regions using two-step MOCVD growth with a wet etching technique. Prior to the device fabrication, active channel- and leakage-current are calculated using a d.c. equivalent circuit to quantitatively estimate the current-confinement effect. QWLA consisting of 10 QWRs has currently demonstrated a maximum output power as high as 18.2 mW at 385 mA and a threshold current density as low as 0.23 kA m-2 facet-1 under room temperature pulsed operation.",

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AU - Kim, T. G.

AU - Kim, E. K.

AU - Min, S. K.

AU - Park, J. H.

PY - 1997/8

Y1 - 1997/8

N2 - A new GaAs/AlGaAs quantum wire laser array (QWLA) confined by p-n junction-isolation stripes is reported. The QWLA is fabricated with 1.5 μm wide stripe-channels through the quantum wire (QWR) active regions using two-step MOCVD growth with a wet etching technique. Prior to the device fabrication, active channel- and leakage-current are calculated using a d.c. equivalent circuit to quantitatively estimate the current-confinement effect. QWLA consisting of 10 QWRs has currently demonstrated a maximum output power as high as 18.2 mW at 385 mA and a threshold current density as low as 0.23 kA m-2 facet-1 under room temperature pulsed operation.

AB - A new GaAs/AlGaAs quantum wire laser array (QWLA) confined by p-n junction-isolation stripes is reported. The QWLA is fabricated with 1.5 μm wide stripe-channels through the quantum wire (QWR) active regions using two-step MOCVD growth with a wet etching technique. Prior to the device fabrication, active channel- and leakage-current are calculated using a d.c. equivalent circuit to quantitatively estimate the current-confinement effect. QWLA consisting of 10 QWRs has currently demonstrated a maximum output power as high as 18.2 mW at 385 mA and a threshold current density as low as 0.23 kA m-2 facet-1 under room temperature pulsed operation.

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JO - Solid-State Electronics

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V-grooved GaAs/AlGaAs quantum wire laser array confined by junction-isolation stripes

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