Vapor phase epitaxy growth of GaN on pulsed laser deposited ZnO buffer layer

Engineering & Materials Science

• Vapor phase epitaxy 100%
• Buffer layers 80%
• Pulsed lasers 77%
• Photoluminescence 30%
• Pulsed laser deposition 19%
• X rays 17%
• Sapphire 16%
• Substrates 13%
• Crystalline materials 13%
• Reflection high energy electron diffraction 12%
• Crystal structure 8%
• Optical properties 7%
• Doping (additives) 7%
• Rocks 5%
• Cracks 4%

Physics & Astronomy

• vapor phase epitaxy 58%
• pulsed lasers 48%
• buffers 47%
• photoluminescence 9%
• pulsed laser deposition 8%
• sapphire 8%
• curves 7%
• x rays 6%
• rocks 4%
• flat surfaces 4%
• crystal structure 3%
• cracks 3%
• optical properties 3%

Chemical Compounds

• Vapor Phase Epitaxy 89%
• Buffer Solution 36%
• Liquid Film 9%
• X-Ray 8%
• Acceptor Level 7%
• Photoluminescence 7%
• Pulsed Laser Deposition 6%
• Photoluminescence Spectrum 4%
• Optical Property 3%
• Donor 3%
• Surface 3%
• Diffusion 2%
• Crystal Structure 2%