Vapor phase epitaxy of GaN using GaCl3/N2 and NH3/N2

Heon Lee, James S. Harris

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36 Citations (Scopus)


Thermodynamic calculations were done on chloride transport vapor phase epitaxy of GaN using GaCl3/N2 and NH3/N2. At typical growth temperature and gas flow rates, both GaN formation and gas phase etching reactions of GaN were thermodynamically favored. Under thermodynamic equilibrium, most ammonia should decompose to nitrogen and hydrogen gases and gas phase etching of GaN occurs by HCl. From experimental measurements, less than 10% of the incoming ammonia decomposes and under this condition, GaN formation from GaCl3/N2 and NH3/N2 is thermodynamically favored. This calculation matches our experimental results. Experimentally, we have optimized the growth conditions of GaN. High crystalline quality thick GaN films (10-15 μm) were grown on c-Al2O3. The GaN films show band-edge emission dominated PL at both room temperature and 77 K. From the φ-scan: the GaN films grown on c-Al2O3 are single crystalline. The typical growth rates were about 10-15 μm/h.

Original languageEnglish
Pages (from-to)689-696
Number of pages8
JournalJournal of Crystal Growth
Issue number4
Publication statusPublished - 1996 Dec
Externally publishedYes

Bibliographical note

Funding Information:
This work is supported by ARPA and University of New Mexico through contract No. MDA 972-94-1-0003. The authors would like to thank M. Yuri and T. Ueda for their help and useful discussions.

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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