Variation in RF performance of MOSFETs due to substrate digital noise coupling

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3 Citations (Scopus)


In this letter, the variation in the key RF performance parameters of MOSFETs in the presence of the substrate digital noise coupling is investigated. The parameters, including fT and fmax , showed substantial change up to ∼20% with realistic level of noise injection. It is shown that such change in the RF performance with the noise injection is due to the threshold voltage VT variation. The observed VT variation is attributed to the virtual body effect due to the substrate potential fluctuation by the coupled substrate digital noise.

Original languageEnglish
Article number5481971
Pages (from-to)384-386
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Issue number7
Publication statusPublished - 2010 Jul

Bibliographical note

Funding Information:
Manuscript received December 31, 2009; revised April 07, 2010. First published June 07, 2010; current version published July 08, 2010. This work was supported by the IT R&D Program of MKE/IITA (2008-F006-02). The authors are with the School of Electrical Engineering, Korea University, Seoul 136-701, Korea (e-mail: Color versions of one or more of the figures in this paper are available online at Digital Object Identifier 10.1109/LMWC.2010.2049431


  • Substrate coupling
  • substrate noise

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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