Variation of poly-Si grain structures under thermal annealing and its effect on the performance of TiN/Al₂O₃/Si₃N₄/SiO₂/poly-Si capacitors

Keyphrases

• Silica 100%
• Silicon Nitride 100%
• Aluminum Oxide 100%
• Capacitors 100%
• Thermal Annealing 100%
• Grain Structure 100%
• Poly-Si 100%
• Annealing Process 40%
• Rapid Thermal Annealing 40%
• High-pressure Annealing 40%
• Device Performance 20%
• Performance Parameters 20%
• Grain Boundary 20%
• Erase Speed 20%
• Grain Size 20%
• Thermal Annealing Temperature 20%
• Data Retention 20%
• Si-SiO2 Interface 20%
• Recrystallization 20%
• Passivation 20%
• Polysilicon 20%
• Trap Density 20%
• Memory Property 20%
• Poly-Si Film 20%
• TCAD Simulation 20%
• Gap States 20%
• Silvaco TCAD 20%
• Poly-Si Channel 20%
• Annealing Pressure 20%
• Transistor Level 20%

Material Science

• Annealing 100%
• Silicon Nitride 100%
• Al2O3 100%
• Capacitor 100%
• Crystal Microstructure 100%
• Film 20%
• Density 20%
• Silicon 20%
• Transistor 20%
• Grain Size 20%
• Grain Boundaries 20%

Engineering

• Poly-Si Grain 100%
• Silicon Dioxide 100%
• Polysilicon 100%
• Annealing Process 33%
• Rapid Thermal Annealing 33%
• Passivation 16%
• Performance Parameter 16%
• Annealing Temperature 16%
• Device Performance 16%
• Data Retention 16%
• Grain Boundaries 16%
• Band Gap 16%